Nicolò Piluso - ST Microelectronics

基本信息

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职业迁徙

个人简介

Nicolò Piluso received the M.S. degree in physics and the Ph.D. degree in astrophysics from the University of Catania, Catania, Italy, in 2004 and 2008, respectively. He has held a post-doctoral position with the Institute of Microelectronics and Microsystems, National Research Council, Catania, since 2011, where he is involved in optical characterization, in particular, micro-Raman spectroscopy.

研究兴趣

论文共 101 篇作者统计合作学者相似作者

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Buffer Layer Dependence of Defectivity in 200mm 4H-Sic Homoepitaxy

Domenica Raciti,Ruggero Anzalone, Mathias Isacson,Nicolò Piluso,Andrea Severino

Defect and diffusion forum/Diffusion and defect data, solid state data Part A, Defect and diffusion forum (2024): 117-121

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Two-Dimensional Electron Gas Isolation Mechanism in Al0.2ga0.8n/Gan Heterostructure by Low-Energy Ar, C, Fe Ion Implantation

Antonino Scandurra, Paolo Ragonese,Cristiano Calabretta, Khadisha Zahra, Liam Soomary,Fabrizio Roccaforte,Giuseppe Greco,Nicolo Piluso,Maria Eloisa Castagna,Ferdinando Iucolano,Andrea Severino,Elena Bruno,Salvo Mirabella

Applied Surface Science（2024）

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Advanced Strategies for High Activation in Ion Implanted 4H-Sic by Laser Annealing

C. Calabretta,A. Pecora,M. Agati,A. Muoio,V. Scuderi,S. Privitera,R. Reitano,N. Piluso,A. Severino,S. Boninelli,F. La Via

2024 25th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)pp.1-5, (2024)

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TEM Investigation on High Dose Al Implanted 4H-Sic Epitaxial Layer