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Vinayakprasanna N. Hegde received the M.Sc. degree in physics from the University of Mysore, Mysore, India, where he is currently pursuing the Ph.D. degree and a Research Scholar with the Department of Studies in Physics. His main research focus on reliability physics, radiation effects on silicon-germanium heterojunction bipolar transistors, and simulation studies.
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论文共 97 篇作者统计合作学者相似作者
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CHEMICAL PHYSICS IMPACT (2024): 100474
Madhura N. Talwar,Akshatha Gangadhar,Mathankumar Manoharan, R. Manimozhi, S. Srikantaswamy, R.T. Rajendra Kumar,A.P. Gnana Prakash
Materials Science in Semiconductor Processing (2024): 108255
Nuclear and Particle Physics Proceedings (2023): 37-40
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ADVANCES IN MATERIALS AND PROCESSING TECHNOLOGIESpp.1-19, (2023)
Nuclear and Particle Physics Proceedings (2023): 106-109
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Nuclear and Particle Physics Proceedings (2023): 12-14
R. Sai Prasad Goud, A. Mangababu,Arshiya Anjum,Kanaka Ravi Kumar,A. P. Gnana Prakash, S. Venugopal Rao,A. P. Pathak
Radiation Effects and Defects in Solidsno. 1-2 (2023): 83-93
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Solid-State Electronics (2023): 108671-108671
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