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His interests include wide-bandgap semiconductors, particularly metal organic vapor phase epitaxy (MOVPE) of InAlGaN nanostructures and novel optoelectronic devices. Major milestones include the first demonstration of GaN-based distributed feedback (DFB) lasers, the first InGaN thin-film LEDs by excimer laser-lift-off, the first InGaN multiple-quantum-well (MQW) laser diodes transferred onto copper and diamond substrates, the realization of Q-switched two-section InGaN laser diodes, the demonstration of unidirectional emission from spiral-shaped microcavity disk lasers and the realization of GaN-based vertical external cavity surface emitting lasers (VECSELs) in the blue-violet spectral range. More recently his research has focused on the development of semiconductor ultraviolet optical sources. Among recent accomplishments are the first demonstrations of ultraviolet laser diodes with AlGaN and InAlGaN MQW active regions as well as the first demonstration of current-injection laser diodes grown on bulk AlN substrates. Another focus is the development of high-efficiency light emitting diodes (LEDs) emitting in the near and far UV spectral range and the realization of UV LED modules for various applications, including water purification, phototherapy and sensing.
Michael Kneissl has co-authored more than 300 publications, five book chapters, and holds more than 50 patents. He recently co-edited a book on "III-Nitride Ultraviolet Emitters - Technology & Applications" published in the Springer Series on Material Science. He was the recipient of a "Xerox Team Excellence Award in Research and Technology" in 1997 for the realization of blue laser diodes for printing applications and a "Xerox Corporate Research Group Achievement Award" in 1999 for the demonstration of a GaN-based continuous-wave blue-violet laser. He received PARC's "Golden Acorn Award" in 2002 and 2003, respectively, for patents in the area of GaN laser devices and technology. He also received the Defense Advanced Research Projects Agency's (DARPA) "Outstanding Performer Award" in 2003 for his contributions in the DARPA/MTO Semiconductor Ultraviolet Sources (SUVOS) program. Recently, he was elevated to 2016 IEEE Fellow for his contributions to the development of wide bandgap semiconductor laser diodes and ultraviolet LEDs.
Michael Kneissl has co-authored more than 300 publications, five book chapters, and holds more than 50 patents. He recently co-edited a book on "III-Nitride Ultraviolet Emitters - Technology & Applications" published in the Springer Series on Material Science. He was the recipient of a "Xerox Team Excellence Award in Research and Technology" in 1997 for the realization of blue laser diodes for printing applications and a "Xerox Corporate Research Group Achievement Award" in 1999 for the demonstration of a GaN-based continuous-wave blue-violet laser. He received PARC's "Golden Acorn Award" in 2002 and 2003, respectively, for patents in the area of GaN laser devices and technology. He also received the Defense Advanced Research Projects Agency's (DARPA) "Outstanding Performer Award" in 2003 for his contributions in the DARPA/MTO Semiconductor Ultraviolet Sources (SUVOS) program. Recently, he was elevated to 2016 IEEE Fellow for his contributions to the development of wide bandgap semiconductor laser diodes and ultraviolet LEDs.
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F. Piva, M. Pilati,M. Buffolo,N. Roccato,N. Susilo,D. Hauer Vidal,A. Muhin,L. Sulmoni, T. Wernicke,M. Kneissl,C. De Santi,G. Meneghesso,
APPLIED PHYSICS LETTERSno. 18 (2023)
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Semiconductor Science and Technologyno. 10 (2022)
Carol Trager-Cowan, Aeshah Alasmari, William Avis,Jochen Bruckbauer,Paul R Edwards, Gergely Ferenczi,Benjamin Hourahine, Almpes Kotzai,Simon Kraeusel,Gunnar Kusch,Robert W Martin, Ryan McDermott,
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