Meng Zhang - State Key Discipline Laboratory of Wide Band-gap Semiconductor Technology, Xidian University | 人才画像 - AMiner

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个人简介

Meng Zhang received the B.S. degree in electronic science and technology from Xidian University, Xi’an, Shaanxi, China, in 2013, where he is currently pursuing the Ph.D. degree with the School of Advanced Materials and Nanotechnology. His current research interests include the fabrication and characterization of GaN-based high frequency field effect transistors and GaN-based device with fin-shaped structure.

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Improved P-Gan/algan/gan HEMTs with Magnetron Sputtered AlN Cap Layer

Mao Jia,Bin Hou, Ling Yang, Zhiqiang Xue, Qian Xiao,Meng Zhang,Hao Lu,Mei Wu, Xitong Hong,Jiale Du,Qingyuan Chang,Xiao Wang,Yang Li,Jinping Ao,Xiaohua Ma,Yue Hao

APPLIED SURFACE SCIENCE（2025）

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High RF Performance E-mode GaN-on-Si HEMTs with Pout of 5.32 W/mm Using High-Quality Ultrathin Buffer

Jiale Du,Bin Hou, Ling Yang,Yachao Zhang, Qing Zhu,Meng Zhang,Mei Wu,Sen Huang,Fang Song,Hao Lu, Xuerui Niu, Mao Jia, Qingyuan Chang, Qian Yu, Borui Xue, Wen Zhao,Xiaohua Ma,Yue Hao

IEEE Electron Device Lettersno. 99 (2025): 1-1

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3 Kv Fully Vertical Β-Ga2o3 Junction Termination Extension Schottky Barrier Diode with Sputtered P-Gan

Qingyuan Chang,Bin Hou, Ling Yang, Mao Jia, Youjun Zhu,Mei Wu,Meng Zhang,Qing Zhu,Hao Lu, Jiarui Xu, Chunzhou Shi, Jiale Du, Qian Yu, Mengdi Li, Xu Zou, Haolun Sun,Xiaohua Ma,Yue Hao

APPLIED PHYSICS LETTERSno. 6 (2025)

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Recent Advances in AlN-Based Acoustic Wave Resonators

Hao Lu, Xiaorun Hao, Ling Yang,Bin Hou,Meng Zhang,Mei Wu, Jie Dong,Xiaohua Ma

Micromachinesno. 2 (2025)

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The Effect of Channel Layer Thickness on the Performance of GaN HEMTs for RF Applications

Qian Yu,Sheng Wu,Meng Zhang,Ling Yang, Xu Zou,Hao Lu,Chunzhou Shi, Wenze Gao,Mei Wu,Bin Hou,Gang Qiu,Xiaoning He,Xiaohua Ma,Yue Hao

MICROMACHINESno. 1 (2025)

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High Linearity GaN HEMT by Optimized Three-Dimensional-gated Modulation Via Top-Mis-gate Nanowire Channel Structure

Can Gong, Minhan Mi, Yuwei Zhou, Pengfei Wang, Hanzhen Li, Xinyi Wen, Ting Meng,Sirui An, Xiang Du,Kai Cheng,Meng Zhang,Qing Zhu,Xiaohua Ma,Yue Hao

Science China Information Sciencesno. 4 (2025): 1-2

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Gate Conduction Mechanisms and High Vth Stability of Cu-gated P-Gan HEMT

Mao Jia,Bin Hou, Ling Yang,Meng Zhang,Mei Wu,Hao Lu, Xitong Hong, Zhiqiang Xue, Jiale Du, Qingyuan Chang, Qian Xiao,Xiaohua Ma,Yue Hao

Science China Information Sciencesno. 5 (2025): 1-2

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The Electrical Characteristic and Trapping Effect of AlGaN/GaN HEMTs with Fe and Fe/C Co-Doped GaN Buffer Layer

Xuan Su, Ling Yang,Meng Zhang, Qing Zhu, Wenze Gao,Wei Zhao, Qian Yu,Qingyuan Chang,Hao Lu,Chunzhou Shi,Bin Hou,Mei Wu,Sheng Wu,Gang Qiu,Xiaohua Ma,Yue Hao

APPLIED PHYSICS LETTERSno. 10 (2024)

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Channel to Channel Thermal Coupling of Double-Channel GaN-based HEMTs

Shiming Li,Mei Wu,Ling Yang,Hao Lu,Bin Hou,Meng Zhang,Xiaohua Ma,Yue Hao

2024 30TH INTERNATIONAL WORKSHOP ON THERMAL INVESTIGATIONS OF ICS AND SYSTEMS, THERMINIC 2024 (2024)

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5.59 W/mm at 30 GHz from E-mode AlN/GaN HEMT Using Selective Etch of In-Situ SiN Passivation Layer

Pengfei Wang,Minhan Mi,Sirui An,Yuwei Zhou,Zhihong Chen,Qing Zhu,Xiang Du,Yilin Chen,Meng Zhang,Bin Hou, Ruqing Liu,Xiaohua Ma,Yue Hao

IEEE Electron Device Lettersno. 99 (2024): 1-1

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