Matthieu Despeisse

Matthieu Despeisse received the electrical engineer degree in electrical engineering from the Institut National des Sciences Appliquées de Lyon, Lyon, France, in 2002, and the Ph.D. degree for his work on amorphous silicon sensors deposited directly on the readout electronics from European Organization for Particle Physics (CERN), Geneva, Switzerland, in 2006. He then worked until 2008 at the European Organization for Particle Physics (CERN), Geneva, Switzerland. He then joined the Photovoltaics and Thin-Film Electronics Laboratory, École Polytechnique Fédérale de Lausanne, Neuchâtel, Switzerland, in 2009, to lead the research team working on thin film silicon photovoltaics technology. Since 2013, he leads the research activities on crystalline silicon photovoltaics at PV-Center, Centre Suisse d'Électronique et de Microtechnique, Neuchâtel, Switzerland, with special focus on silicon heterojunction technology, passivating contacts and metallization. His research interests include novel silicon radiation sensors (3D, SiPM, a-Si:H), advanced microelectronics, and technology transfer.