基本信息
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个人简介
Research Interests
Currently his research interests cover these topics:
Emerging memory devices (PCM, RRAM, FeRAM): device and material characterization and modelling; performances and reliability investigation and optimization.
Electron device reliability: characterization and modelling of breakdown, BTI, current noise; defect spectroscopy from electrical measurements.
Power amplifier (PA) for RF and mm-wave applications: modelling, design and characterization of PA circuits in CMOS and BiCMOS technology: Pa reliability.
Energy harvesting systems: energy transducer characterization and modelling; design and characterization of power converters for energy harvesting and autonomous sensors.
Printed audio transducers: development, modelling and characterization of novel audio transducers (e.g. thermos-acoustic loudspeaker and microphone) exploiting printed technologies and nano-structured materials.
Flash memory devices based on Floating Gate (FG) and Charge Trapping (CT): characterization and modelling; impact of material properties; device performances and reliability optimization; radiation effects.
Currently his research interests cover these topics:
Emerging memory devices (PCM, RRAM, FeRAM): device and material characterization and modelling; performances and reliability investigation and optimization.
Electron device reliability: characterization and modelling of breakdown, BTI, current noise; defect spectroscopy from electrical measurements.
Power amplifier (PA) for RF and mm-wave applications: modelling, design and characterization of PA circuits in CMOS and BiCMOS technology: Pa reliability.
Energy harvesting systems: energy transducer characterization and modelling; design and characterization of power converters for energy harvesting and autonomous sensors.
Printed audio transducers: development, modelling and characterization of novel audio transducers (e.g. thermos-acoustic loudspeaker and microphone) exploiting printed technologies and nano-structured materials.
Flash memory devices based on Floating Gate (FG) and Charge Trapping (CT): characterization and modelling; impact of material properties; device performances and reliability optimization; radiation effects.
研究兴趣
论文共 316 篇作者统计合作学者相似作者
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2023 IEEE Nanotechnology Materials and Devices Conference (NMDC)pp.805-809, (2023)
引用0浏览0EIWOS引用
0
0
F. Buscemi,E. Piccinini,L. Vandelli,F. Nardi,A. Padovani,B. Kaczer,D. Garbin,S. Clima,R. Degraeve,G. S. Kar,F. Tavanti, A. Slassi,
IEEE Transactions on Electron Devicesno. 4 (2023): 1808-1814
2023 IEEE International Reliability Physics Symposium (IRPS)pp.1-8, (2023)
引用2浏览0EIWOS引用
2
0
Milan Pesic, Bastien Beltrando,Tommaso Rollo,Cristian Zambelli,Andrea Padovani,Rino Micheloni,Rita Maji, Lisa Enman, Mark Saly, Yang Ho Bae,Jung Bae Kim,Dong Kil Yim,
IRPSpp.1-8, (2023)
引用0浏览0EIWOS引用
0
0
Amine Slassi, Linda-Sheila Medondjio,Andrea Padovani,Francesco Tavanti,Xu He,Sergiu Clima,Daniele Garbin,Ben Kaczer,Luca Larcher,Pablo Ordejon,Arrigo Calzolari
ADVANCED ELECTRONIC MATERIALSno. 4 (2023)
2022 IEEE International Reliability Physics Symposium (IRPS)pp.4A.1-1-4A.1-8, (2022)
2022 IEEE International Reliability Physics Symposium (IRPS)pp.3C.4-1-3C.4-10, (2022)
Milan Pešić,Andrea Padovani,Tommaso Rollo, Bastien Beltrando,Jack Strand, Parnika Agrawal,Alexander Shluger,Luca Larcher
2022 IEEE International Memory Workshop (IMW)pp.1-4, (2022)
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