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个人简介
Lina Gatilova received the Ph.D. degree in physics from the University Paris XI, Orsay, France, in 2007.
In 2013, she worked as an Engineering Scientist on dry etching plasma applications for III-V semiconductors with Laboratoire de Photonique et Nanostructure, Marcoussis, France. Since 2013, she permanently joined Observatoire de Paris as a Research Engineer and is responsible for the development and fabrication of micro- and nano-electronic devices based on Schottky diode technologies. This work is conducted in the clean room of CNRS-Centre de Nanostructures et Nanotechnologies, France, in close collaboration with Observatoire de Paris-PSL. Her research interests are focused on the development of nanotechnologies in order to realize high performance submicron Schottky diodes and the diodes-based circuits for sub-THz and THz applications, as well as their qualification for high TRL space application.
研究兴趣
论文共 3 篇作者统计合作学者相似作者
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J. Puech, L. Hermozo, H. Brogniez,R. Roca,T. Fiolleau,J.-P. Chaboureau, F. Auguste,D. Bouniol, J. Delanoe, V. Cipolla, B. Carayon, S. Melle,
IGARSS 2023 - 2023 IEEE International Geoscience and Remote Sensing Symposiumpp.4576-4579, (2023)
J. Puech, L. Hermozo, H. Brogniez,R. Roca,T. Fiolleau,J-P Chaboureau, F. Auguste,D. Bouniol, J. Delanoe, V Cipolla, B. Carayon, S. Melle,
Jérôme Puech, Laura Hermozo,Hélène Brogniez,Rémy Roca,Thomas Fiolleau,Jean-Pierre Chaboureau, Franck Auguste,Dominique Bouniol, Julien Delanoë, Valerio Cipolla, Benjamin Carayon, Samuel Melle,
IGARSSpp.4576-4579, (2023)
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D-Core
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