Ludovic Goux - Interuniversity Microelectronics Centre

基本信息

Career Trajectory

Bio

Accomplished research scientist, with >20 years’ experience in Silicon technology and strong history of achievements in the development and exploration of emerging memory concepts (FeRAM, PCRAM, RRAM,...), disseminated in >200 peer-reviewed publications and >25 patents.
Experienced people manager, at the lead of a department of >50 researchers, engineers and students.
Senior project and program manager, setting scientific and strategic directions, optimizing learning and throughput, managing operations and communication to academic and industrial partners.

Research Interests

Papers共 309 篇Author StatisticsCo-AuthorSimilar Experts

By YearBy Citation主题筛选期刊级别筛选合作者筛选合作机构筛选

Integration of GAA Monolayer MoS2 Nanosheet FETs with Gate First Process for Future 2D CFET Scaling

Fengben Xi, Himanshu Sharma,Xiangyu Wu,Tom Schram, Daire Conlon,Robert K. Grubbs, Pawan Kumar,Tien Dat Ngo,Souvik Ghosh, Fei Han,Dennis van Dorp,Devin Verreck,Surajit Sutar,Quentin Smets,Dennis Lin,Kaustuv Banerjee,Cesar Javier Lockhart de la Rosa,Ludovic Goux,Gouri Sankar Kar

2024 50TH IEEE EUROPEAN SOLID-STATE ELECTRONICS RESEARCH CONFERENCE, ESSERC 2024pp.121-124, (2024)

Cited0Views0EIWOSBibtex

Direct Assessment of Defective Regions in Monolayer MoS2 Field-Effect Transistors Through in Situ Scanning Probe Microscopy Measurements

Albert Minj,Vivek Mootheri,Sreetama Banerjee,Ankit Nalin Mehta,Jill Serron,Thomas Hantschel,Inge Asselberghs,Ludovic Goux,Gouri Sankar Kar,Marc Heyns,Dennis H. C. Lin

ACS Nanono. 15 (2024): 10653-10666

Cited0Views0WOSBibtex

Significant Oxygen Underestimation when Quantifying Barium-Doped SrTiO Layers by Atom Probe Tomography

Richard J. H. Morris,Jhao-Rong Lin,Jeroen E. Scheerder,Mihaela Popovici,Johan Meersschaut,Ludovic Goux,Gouri Sankar Kar,Paul van der Heide,Claudia Fleischmann

MICROSCOPY AND MICROANALYSISno. 1 (2024): 49-58

Cited1Views0WOSBibtex

Predictive and Prospective Calibrated TCAD to Improve Device Performances in Sub-20 Nm Gate Length P-Finfets

Pierre Eyben,An De Keersgieter,Philippe Matagne,Thomas Chiarella,Clement Porret,Andriy Hikavyy,Yong Kong Siew,Ludovic Goux,Jerome Mitard,Naoto Horiguchi

Japanese Journal of Applied Physicsno. 4 (2024): 04SP03-04SP03

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High Density 360 /μm Aligned CNT FET with ION >1 Ma/μm at -0.5 V VD and 30nm Lch

Xiangyu Wu,Marina Y. Timmermans, Lijun Liu, Fengben Xi, Himanshu Sharma,Zaoyang Lin,Daire Cott, Luca Mana,Thomas Nuytten,Jean-Francois de Marneffe, Han,Steven Brems,Ludovic Goux,Cesar Javier Lockhart de la Rosa,Dennis Lin,Gouri Sankar Kar

2024 50TH IEEE EUROPEAN SOLID-STATE ELECTRONICS RESEARCH CONFERENCE, ESSERC 2024pp.133-136, (2024)

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High-Performance Monolayer-2D Stacked Nanosheet FETs with High ION~ 451 Μa/μm and ION/IOFF > 109

2024 IEEE International Electron Devices Meeting (IEDM)pp.1-4, (2024)

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New Insights of the Switching Process in GeAsTe Ovonic Threshold Switching (OTS) Selectors

Zeyu Hu,Weidong Zhang,Robin Degraeve,Daniele Garbin,Zheng Chai,Nishant Saxena,Pedro Freitas,Andrea Fantini,Taras Ravsher,Sergiu Clima,Jian Fu Zhang,Romain Delhougne,Ludovic Goux,Gouri Kar

IEEE TRANSACTIONS ON ELECTRON DEVICES（2023）

Cited2Views0EIWOSBibtex

Understanding the Cycling-Dependent Threshold Voltage Instability in OTS Devices

Marina Yamaguchi,Robin Degraeve,Daniele Garbin,Sergiu Clima,Taras Ravsher,Daisuke Matsubayashi, Takayuki Tsukamoto,Romain Delhougne,Ludovic Goux,Gouri Sankar Kar

2022 International Electron Devices Meeting (IEDM) (2022)

Cited5Views0EIWOSBibtex

Switching Layer Optimization in Co-based CBRAM for >105 Memory Window in Sub-100 Μa Regime

Yongjun Cho,Bo Soo Kang,Pankaj Kumbhare,Romain Delhougne,Laura Nyns,Ming Mao,Ludovic Goux,Gouri Sankar Kar,Attilio Belmonte

SSRN Electronic Journal (2022)

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Impact of Relaxation on the Performance of GeSe True Random Number Generator Based on Ovonic Threshold Switching

Xue Zhou,Zeyu Hu,Zheng Chai,Weidong Zhang,Sergiu Clima,Robin Degraeve,Jian Fu Zhang,Andrea Fantini,Daniele Garbin,Romain Delhougne,Ludovic Goux,Gouri Sankar Kar

IEEE Electron Device Letters（2022）

Cited10Views0EIWOSBibtex

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