Kiran V. Chatty

IBM Microelectronics, Essex Junction, VT USA

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HIGH VOLTAGE MOSFET DEVICES AND METHODS OF MAKING THE DEVICES

Sujit Banerjee,Kevin Matocha,Kiran V Chatty

(2015)

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Vertical junction field effect transistors with improved thermal characteristics and methods of making

Janna R B Casady,Kiran V Chatty, David C Sheridan, Andrew Ritenour

(2014)

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Robust ESD protection circuit, method and design structure for tolerant and failsafe designs

John B Campi, Shunhua T Chang,Kiran V Chatty,Robert J Gauthier, L I Junjun,Mujahid Muhammad

(2014)

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1700V, 5.5mOhm-cm2 4H-SiC DMOSFET with Stable 225°C Operation

Kevin Matocha,Kiran V Chatty,Sujit Banerjee,L B Rowland

Materials Science Forum, (2014): 903-906

Cited by4Bibtex

ELECTROSTATIC DISCHARGE (ESD) DEVICE AND METHOD OF FABRICATING

Shunhua Chang,Kiran V Chatty,Robert J Gauthier,Mujahid Muhammad

(2014)

Cited by3Bibtex

SILICON CONTROLLED RECTIFIER STRUCTURE WITH IMPROVED JUNCTION BREAKDOWN AND LEAKAGE CONTROL

Kiran V Chatty,Robert J Gauthier,Junjun Li, Alain Loiseau

(2014)

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HIGH VOLTAGE SEMICONDUCTOR DEVICES AND METHODS OF MAKING THE DEVICES

Kiran V Chatty,Kevin S Matocha,Sujit Banerjee, L B Rowland

(2014)

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EXTREMELY THIN SEMICONDUCTOR-ON-INSULATOR (ETSOI) LAYER

Kiran V Chatty, Jason E Cummings, Toshiharu Furukawa,Robert J Gauthier, Jed H Rankin, Robert R Robison, William R Tonti

(2013)

Cited by2Bibtex

Electrical overstress protection circuit

John B Campi, Shunhua T Chang,Kiran V Chatty,Robert J Gauthier,Junjun Li,Mujahid Muhammad

(2013)

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Low leakage electrostatic discharge protection circuit

Michel J Aboukhalil,Kiran V Chatty,Chee Kwang Quek,Robert J Gauthier, Nathaniel Peachey

(2013)

Cited by2Bibtex

SCR/MOS clamp for ESD protection of integrated circuits

John B Campi,Shunhua Chang,Kiran V Chatty,Robert J Gauthier,Junjun Li,Rahul Mishra,Mujahid Muhammad

(2013)

Cited by3Bibtex

Field effect transistor with air gap dielectric

Wagdi W Abadeer,Kiran V Chatty,Robert J Gauthier, Jed H Rankin, William R Tonti, Yun Shi

(2013)

Cited by8Bibtex

900V, 1.46mOhm-cm2 4H-SiC Depletion Mode Vertical JFET

Kiran V Chatty,David C Sheridan, Volodymyr Bondarenko, Robin Schrader,J B Casady

MATERIALS SCIENCE FORUM, (2013): 915-920

Bibtex

Recent Advances in VJFETs at SemiSouth

J B Casady, Kevin M Speer, Robin Schrader, V P Bondarenko, David C Sheridan,Kiran V Chatty

(2013)

Cited by1Bibtex

ESD FIELD-EFFECT TRANSISTOR AND INTEGRATED DIFFUSION RESISTOR

John B Campi, Shunhua T Chang,Kiran V Chatty,Robert J Gauthier,Rahul Mishra,Junjun Li,Mujahid Muhammad

(2013)

Bibtex

Method of generating uniformly aligned well and isolation regions in a substrate and resulting structure

Wagdi W Abadeer, Lilian Kamal,Kiran V Chatty,Robert J Gauthier, Jed H Rankin, Robert R Robison, William R Tonti

(2012)

Bibtex

Vertical NPNP structure in a triple well CMOS process

John B Campi, Shunhua T Chang,Kiran V Chatty,Robert J Gauthier,Junjun Li,Rahul Mishra,Mujahid Muhammad

(2012)

Cited by1Bibtex

LOW LEAKAGE, LOW CAPACITANCE ELECTROSTATIC DISCHARGE (ESD) SILICON CONTROLLED RECITIFER (SCR), METHODS OF MANUFACTURE AND DESIGN STRUCTURE

Michel J Aboukhalil, Shunhua T Chang,Kiran V Chatty,Robert J Gauthier, L I Junjun,Mujahid Muhammad

(2012)

Bibtex

Low trigger voltage electrostatic discharge NFET in triple well CMOS technology

John B Campi, Shunhua T Chang,Kiran V Chatty,Robert J Gauthier,Junjun Li,Rahul Mishra,Mujahid Muhammad

(2012)

Cited by5Bibtex

FORMING AN EXTREMELY THIN SEMICONDUCTOR-ON-INSULATOR (ETSOI) LAYER

Wagdi W Abadeer, Lilian Kamal,Kiran V Chatty, Jason E Cummings, Toshiharu Furukawa,Robert J Gauthier, Jed H Rankin, Robert R Robison, William R Tonti

(2012)

Cited by10Bibtex

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Kiran V. ChattyBinding

Papers76 papers

Kiran V. Chatty