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Kei Kaneko was born in Kanagawa Prefecture, Japan, in August 1973. She received the B.S. degree in physics from Gakushuin University, Tokyo, Japan, in 1996 and the M.S. degree in physics from the University of Tokyo in 1998.
She joined Research and Development Center, Toshiba Corporation, Kawasaki, Japan, in 1998, where she has been engaged in research on nitride semiconductor optoelectronic devices. Her present interests are growth and characterization of nitride semiconductors.
Ms. Kaneko is a member of the Japan Society of Applied Physics.
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International Conference on Photonics, Optics and Laser Technologypp.72-77, (2024)
2023 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC)pp.1-1, (2023)
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Optica High-brightness Sources and Light-driven Interactions Congress 2022 (2022)
Journal of Computer Chemistry, Japan -International Editionno. 0 (2022)
The Japan Society of Applied Physics (2021)
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PROCEEDINGS OF THE 10TH INTERNATIONAL CONFERENCE ON PHOTONICS, OPTICS AND LASER TECHNOLOGY (PHOTOPTICS)pp.128-133, (2021)
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