基本信息
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职业迁徙
个人简介
Her main field of interest is electronic materials science – studying the effects of defects on the properties of semiconductor materials and devices. She has worked on strain relaxation in lattice-mismatched semiconductor heterostructures, diffusion barriers and electrical contacts for silicon and III-V semiconductor based devices, epitaxial growth and nucleation, and electron transport through thin films and interfaces. Her work on characterization tools including electron microscopy, Rutherford backscattering, x-ray diffraction, and scanning probe microscopy.
研究兴趣
论文共 294 篇作者统计合作学者相似作者
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J. S. R. McCoombs, B. D. MacNeil, V. Askarpour, J. Myra, H. Herdin, M. Pula,M. D. Robertson, G. M. Luke,K. L. Kavanagh, J. Maassen,T. L. Monchesky
arxiv(2023)
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SILICON (2022)
Nature Communicationsno. 1 (2022): 1-10
Surface Science (2022): 122080
arxiv(2020)
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MRS Online Proceedings Libraryno. 1 (2020): 107-112
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