One main research goal at NPOL is the advanced growth, characterization and device fabrication of 2D layered materials and their heterostructures for emerging electronic and optoelectronic applications. More specifically, we are interested in wide band-gap III-Nitride materials such as hexagonal Boron Nitride (h-BN), Gallium Nitride (GaN), Alluminium Nitride (AlN) and its ternary alloys that can potentially realize highly efficient 2D materials-based electronics, power devices, and deep-ultraviolet (DUV) and visible optoelectronics.
Another research goal is to explore and design novel electrical, optical, and optoelectronic properties of nanostructured materials to develop highly efficient devices. More specifically, we use the oblique angle deposition technique to design well-ordered nanostructures of diverse materials and morphology and their hierarchical combinations to realize optimal performance devices.