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Joana V. Pinto received the degree in physics engineering from Universidade Nova de Lisboa in 2000, and the Ph.D in applied physics at the same university with the thesis: “Modification of the Electric and Magnetic Properties of Metallic Oxides by Ion Implantation” work that was developed at Instituto Tecnológico e Nuclear (ITN) and at Faculdade de Ciências da Universidade de Lisboa.
She is currently a Post-Doctoral Researcher at the Materials Research Centre CENIMAT (FCT-UNL), Portugal. The main topics of her research are focused on the development of thin film transistors based on amorphous semiconductor oxides, to be used as biosensors (ISFET, ENFET and DNAFET). her main interests are in thin film transistors, EIS structures, and biosensors.
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FlatChempp.100672, (2024)
Springer eBookspp.79-100, (2023)
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Polymersno. 10 (2023): 2277-2277
Materials Characterization (2023): 113371-113371
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