基本信息
浏览量:88
职业迁徙
个人简介
From 1961 to 1970, he was a Nuclear Reactor Staff Physicist with the U.S. Army Harry Diamond Laboratories. In 1970, he began his research on the effects of radiation and radiation hardening of MOS electronics. In 1992, he began his research on SiC JFETS for nuclear power and space applications and continued this research until his retirement in 1998 from the Army Research Laboratory (ARL) as the Senior Research Scientist for electronics survivability in harsh environments. Since his retirement, he has continued his research on SiC devices with a focus on SiC MOSFETS for high-power and high-temperature applications. He has served as a Consultant with the ARL and as a Research Associate with the University of Maryland. He is currently with the Berkeley Research Associates, Springfield, VA. He has authored and coauthored over 80 papers.,Dr. McGarrity was elected as a fellow of the IEEE in 1985 for his contributions to the understanding of the physical mechanisms producing radiation damage in MOS electronics. He served for 12 years (three years as a Chairman) on the IEEE Radiation Effects Committee of the Nuclear and Plasma Science Society. He was the recipient of two Best Paper Awards from the IEEE Nuclear and Space Radiation Effects Conference.
研究兴趣
论文共 39 篇作者统计合作学者相似作者
按年份排序按引用量排序主题筛选期刊级别筛选合作者筛选合作机构筛选
时间
引用量
主题
期刊级别
合作者
合作机构
2018 IEEE International Reliability Physics Symposium (IRPS)pp.1-2, (2018)
引用36浏览0EI引用
36
0
Aivars Lelis,Daniel Habersat, Fatimat Olaniran, Brian Simons,James McGarrity,F. Barry McLean,Neil Goldsman
加载更多
作者统计
合作学者
合作机构
D-Core
- 合作者
- 学生
- 导师
数据免责声明
页面数据均来自互联网公开来源、合作出版商和通过AI技术自动分析结果,我们不对页面数据的有效性、准确性、正确性、可靠性、完整性和及时性做出任何承诺和保证。若有疑问,可以通过电子邮件方式联系我们:report@aminer.cn