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个人简介
John Robertson has undertaken seminal work to develop industrially valuable electronic materials such as HfO2, diamond like carbon and carbon nanotubes. His prediction of the conduction band offset of HfO2 allowed it to replace SiO2 as the gate oxide in complementary metal oxide semiconductor (CMOS) transistors, and so to continue CMOS scaling. His further work on its defects and interfaces with metals allowed its successful implementation.
His work on the deposition process and characterization of diamond-like carbon (DLC) allowed the development of the thinnest and smoothest protective films, and the continued scaling of hard-disk drive memory densities.
His work on the deposition process and characterization of diamond-like carbon (DLC) allowed the development of the thinnest and smoothest protective films, and the continued scaling of hard-disk drive memory densities.
研究兴趣
论文共 1218 篇作者统计合作学者相似作者
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Hailing Guo,Zhaofu Zhang,Chen Shao, Wei Yu,Qingzhong Gui, Peng Liu,Hongxia Zhong,Ruyue Cao,John Robertson,Yuzheng Guo
Journal of Materials Science & Technology (2024)
Hailing Guo,Zhaofu Zhang,Chen Shao, Wei Yu,Qingzhong Gui, Peng Liu,Hongxia Zhong,Ruyue Cao,John Robertson,Yuzheng Guo
Journal of Materials Science & Technology (2024)
Lindong Wu,Zongwei Wang,Lin Bao,Linbo Shan,Zhizhen Yu,Yunfan Yang, Shuangjie Zhang,Guandong Bai, Cuimei Wang,John Robertson,Yuan Wang,Yimao Cai,
Science China Information Sciencesno. 2 (2024): 1-11
H. Naganuma, M. Uemoto, H. Adachi, H. Shinya, I. Mochizuki, M. Kobayashi, A. Hirata,B. Dlubak, T. Ono, P. Seneor,J. Robertson, K. Amemiya
JOURNAL OF PHYSICAL CHEMISTRY C (2023)
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2023 INTERNATIONAL VLSI SYMPOSIUM ON TECHNOLOGY, SYSTEMS AND APPLICATIONS, VLSI-TSA/VLSI-DAT (2023)
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Applied Physics Lettersno. 16 (2023)
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Nature Communicationsno. 1 (2023): 2483-2483
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JOURNAL OF APPLIED PHYSICSno. 11 (2023)
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