Ivan V. Egorov was born in Saratov, Russia, in 1983. He received the B.S. and M.S. degrees in physical engineering from the Department of Physical and Quantum Electronics, Moscow Institute of Physics and Technology (MIPT), in 2006. He has been a Research Engineer with the Center for Molecular Electronics, MIPT, since 2004. He has authored eight articles. His research interests include seismic sensors development, the influence of electrochemical cell parameters on noise, and the nonlinear characteristics of electrochemical cell at extreme external parameters such as input signal and temperature.