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Femtosecond Laser Ablation and Micromachining
In recent years femtosecond laser ablation and micromachining has been an emerging area, offering new opportunities for materials processing due to the qualitatively different interactions of ultrashort light pulses with solids. The work in our laboratory on femtosecond laser – materials interactions covers a broad range, directed both at fundamental studies as well as applications. The ultrafast laser pulses can be utilized to modify materials on the nanometer or micron length scales, and undertake precision laser machining. In these projects, we work closely with the Canadian Centre for Electron Microscopy (CCEM) within the Brockhouse Institute for Materials Research. The capabilities of the CCEM enable detailed studies of the final state of laser-modified targets through a host of capabilities including transmission electron microscopy, scanning probe microscopy, focused ion beam techniques, high-resolution optical microscopy, and scanning electron microscopy. Our more recent research activities in this area have concentrated on potential applications in silicon photonics, and investigations of ripple formation at the buried interface in silicon dioxide/silicon samples..
Electron Microscopic Studies of Ytterbium-Doped Optical Fibres
We have initiated a project involving the ultrahigh resolution electron microscopy of ytterbium-doped optical fibres. Doped fibres represent a very important domain in terms of state-of-the-art laser and optical amplifier technology. One of the key motivations for initiating the work was to gain further insights into photodarkening mechanisms in doped optical fibres. The ultrahigh resolution electron microscopy of Yb atoms in glass, conducted with the facilities of the Canadian Centre for Electron Microscopy, is extremely challenging experimentally. We aim to detect single Yb atoms in glass which can reveal effects of ion clustering. The tour-de-force experiments push the techniques of sample preparation and analysis to the limit. Beyond possible insights into photodarkening, our experiments could also lead to new knowledge into fabrication mechanisms of various specialty optical fibres.
Applications of THz Radiation
The application of THz radiation is a rapidly developing area of R&D worldwide, both in wide-ranging interdisciplinary applications as well as in fundamental science. Ultrafast THz radiation capabilities have been established in our laboratory based on nonlinear optical conversion and electro-optical detection using near-visible femtosecond light pulses from our Ti:sapphire laser systems. The ultrafast pulse capability enables pump-probe experiments whereby the properties of a material can be altered on an ultrashort time frame and the recovery of the target can be monitored as a function of time. We have used these capabilities for selected experiments including the determination of nonlinear optical coefficients for selected semiconductors, and the study of carrier relaxation in optically-excited ion-irradiated silicon. Our group was also part of the initiative to establish high intensity THz capabilities at the Advanced Laser Light Source (ALLS) at INRS in Montreal.
Femtosecond Laser Ablation and Micromachining
In recent years femtosecond laser ablation and micromachining has been an emerging area, offering new opportunities for materials processing due to the qualitatively different interactions of ultrashort light pulses with solids. The work in our laboratory on femtosecond laser – materials interactions covers a broad range, directed both at fundamental studies as well as applications. The ultrafast laser pulses can be utilized to modify materials on the nanometer or micron length scales, and undertake precision laser machining. In these projects, we work closely with the Canadian Centre for Electron Microscopy (CCEM) within the Brockhouse Institute for Materials Research. The capabilities of the CCEM enable detailed studies of the final state of laser-modified targets through a host of capabilities including transmission electron microscopy, scanning probe microscopy, focused ion beam techniques, high-resolution optical microscopy, and scanning electron microscopy. Our more recent research activities in this area have concentrated on potential applications in silicon photonics, and investigations of ripple formation at the buried interface in silicon dioxide/silicon samples..
Electron Microscopic Studies of Ytterbium-Doped Optical Fibres
We have initiated a project involving the ultrahigh resolution electron microscopy of ytterbium-doped optical fibres. Doped fibres represent a very important domain in terms of state-of-the-art laser and optical amplifier technology. One of the key motivations for initiating the work was to gain further insights into photodarkening mechanisms in doped optical fibres. The ultrahigh resolution electron microscopy of Yb atoms in glass, conducted with the facilities of the Canadian Centre for Electron Microscopy, is extremely challenging experimentally. We aim to detect single Yb atoms in glass which can reveal effects of ion clustering. The tour-de-force experiments push the techniques of sample preparation and analysis to the limit. Beyond possible insights into photodarkening, our experiments could also lead to new knowledge into fabrication mechanisms of various specialty optical fibres.
Applications of THz Radiation
The application of THz radiation is a rapidly developing area of R&D worldwide, both in wide-ranging interdisciplinary applications as well as in fundamental science. Ultrafast THz radiation capabilities have been established in our laboratory based on nonlinear optical conversion and electro-optical detection using near-visible femtosecond light pulses from our Ti:sapphire laser systems. The ultrafast pulse capability enables pump-probe experiments whereby the properties of a material can be altered on an ultrashort time frame and the recovery of the target can be monitored as a function of time. We have used these capabilities for selected experiments including the determination of nonlinear optical coefficients for selected semiconductors, and the study of carrier relaxation in optically-excited ion-irradiated silicon. Our group was also part of the initiative to establish high intensity THz capabilities at the Advanced Laser Light Source (ALLS) at INRS in Montreal.
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Applied Physics Ano. 1 (2010): 185-192
Applied Physics Ano. 3 (2008): 473-478
Physics of Electronic and Atomic Collisions: 18th International Conferenceno. 1 (2008): 105-114
Journal of Luminescenceno. 2 (2007): 311-315
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