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个人简介
Haoyu Qian (S’12) received the B.S. degree in physics from Peking University, Beijing, China, in 2006, and the M.S. degree in physics from Texas A&M University, College Station, TX, USA, in 2009, where he is currently pursuing the Ph.D. degree in electrical engineering.
He was an RFIC Design Intern with CSR (formerly Microtone), Plano, TX, USA, in 2011, working on PLL-based frequency synthesizer design for TV tuner applications. He has been with Qualcomm, San Diego, CA, USA, since 2014, working on RF front-end IC design. His research interests include voltage regulator integrated circuit design such as low drop-out (LDO) regulator and switching-mode voltage regulator, and RF integrated circuit design such as frequency synthesizer, mixer, VCO, RF switch, RF filter, and power amplifier.
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IoT and Low-Power Wirelesspp.183-206, (2018)
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