Gregory Fredeman IBM Corporation, Poughkeepsie, NY 12601 USA (fredemag@us.ibm.com). Mr. Fredeman received an M.S. degree in electrical engineering in 2005. In 1996, he joined IBM Microelectronics, VT, USA, where he worked on test development and design verification for stand-alone synchronous dynamic random-access memory (DRAM). In 2000, he transferred to IBM Microelectronics, East Fishkill, NY, USA, where he worked on the design of high-performance embedded DRAM and electrically programmable fuse (EFUSE) products. He is currently a Senior Engineer working on embedded DRAM designs for IBM server chips.