Gen Tsutsui - Institute of Industrial Science, University of Tokyo

基本信息

Career Trajectory

Bio

Gen Tsutsui (M'04) received the B.E. and M.E. degrees in electrical engineering from Hiroshima University, Hiroshima, Japan, in 1999 and 2001, respectively, and the Ph.D. degree in electronic engineering from University of Tokyo, Tokyo, Japan, in 2005. Since 2005, he has been with NEC Electronics, Sagamihara, Japan, where he has been engaged in device design for advanced CMOS technology especially focusing on random and systematic device variability. His research interest also includes quantum effects in nanoscale MOSFETs.

Research Interests

Papers共 70 篇Author StatisticsCo-AuthorSimilar Experts

By YearBy Citation主题筛选期刊级别筛选合作者筛选合作机构筛选

EUV Patterned Gate Variation Reduction in Next Generation Transistor Architectures

Gopal Sankar Kenath,Martin Burkhardt, Nikhil Jain, Anna Lin,Jennifer Church,Gen Tsutsui, Stephanie Reynoso, Xuan Liu, Chris Sheraw,Pietro Montanini,Eric Miller,Indira Seshadri,Luciana Meli,Nelson Felix

OPTICAL AND EUV NANOLITHOGRAPHY XXXVII (2024)

Cited0Views0Bibtex

Hardware Based Performance Assessment of Vertical-Transport Nanosheet Technology

G. Tsutsui,S. Song,J. Strane,R. Xie, L. Qin,C. Zhang, D. Schmidt,S. Fan, B. Hong,Y. Jung,C-W. Sohn,I. Hwang, J. Yim, G. H. Son, G. Jo,K-I. Kim,M. Sankarapandian,S. Mochizuki,I. Seshadri,E. Miller,J. Li,J. Demarest,C. Waskiewicz,R. G. Southwick,H. Zhou,R. N. Pujari, P. Nieves,M. Wang,H. Jagannathan,B. Anderson,D. Guo,R. Divakaruni,T. Wu,K-I. Seo,H. Bu

2022 International Electron Devices Meeting (IEDM) (2022)

Cited6Views0EIWOSBibtex

CMOS Technology Beyond FINFET : Challenges and Opportunities

Kai Zhao,Julien Frougier,Nicolas Loubet,Hemanth Jagannathan, Brent Anderson,Gen Tsutsui, Liqiao Qin,Jingyun Zhang,Shogo Mochizuki, Teresa Wu, Dechao Guo,Huiming Bu

Extended Abstracts of the 2022 International Conference on Solid State Devices and Materials (2022)

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Vertical-Transport Nanosheet Technology for CMOS Scaling Beyond Lateral-Transport Devices

H. Jagannathan,B. Anderson,C-W Sohn,G. Tsutsui,J. Strane,R. Xie,S. Fan,K- Kim,S. Song,S. Sieg,I Seshadri,S. Mochizuki,J. Wang,A. Rahman, K-Y Cheon,I Hwang,J. Demarest,J. Do, J. Fullam, G. Jo, B. Hong,Y. Jung, M. Kim, S. Kim, R. Lallement,T. Levin,J. Li,E. Miller,P. Montanini,R. Pujari, C. Osborn,M. Sankarapandian, G-H Son,C. Waskiewicz,H. Wu, J. Yim, A. Young,C. Zhang, A. Varghese,R. Robison,S. Burns,K. Zhao,T. Yamashita,D. Dechene,D. Guo,R. Divakaruni,T. Wu,K- Seo,H. Bu

2021 IEEE International Electron Devices Meeting (IEDM) (2021)

Cited34Views0EIWOSBibtex

Strain Engineering in Functional Materials

G. Tsutsui,S. Mochizuki,N. Loubet,S. W. Bedell,D. K. Sadana

AIP Advancesno. 3 (2019)

Cited49Views0Bibtex

低電力応用のための漏れを意識したSi/SiGe CMOS FinFET【JST・京大機械翻訳】

Gen Tsutsui,Curtis Durfee,Miaomiao Wang,Aniruddha Konar,Heng Wu,Shogo Mochizuki,Ruqiang Bao, Bruce Stephen,Juntao Li,Zhou Huimei,Schmidt Daniel, Y.C. Ju,Kelly James,Watanabe Koji,Levin Theodore,Walter Kleemeier,Dechao Guo, S Gurjar Devendra,Dinesh Gupta,Andreas Knorr,Huiming Bu

IEEE Conference Proceedings (2018): 87-88

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