Franz Schanovsky - Christian Doppler Laboratory

基本信息

Career Trajectory

Bio

Franz Schanovsky received the Ph.D. degree in microelectronics from TU Wien in 2013, where he focused on the atomistic modeling of the bias temperature instability in MOS transistors. After working as a Post-Doctoral Researcher and a Software Developer, he joined GTS as a Senior Researcher in 2016. He is responsible for the extension and development of the reliability and variability models in the Minimos-NT device simulator.

Research Interests

Papers共 62 篇Author StatisticsCo-AuthorSimilar Experts

By YearBy Citation主题筛选期刊级别筛选合作者筛选合作机构筛选

A Physical TCAD Mobility Model of Amorphous In-Ga-Zn-O (A-Igzo) Devices with Spatially Varying Mobility Edges, Band-Tails, and Enhanced Low-Temperature Convergence

Mischa Thesberg,Franz Schanovsky, Ying Zhao,Markus Karner,Jose Maria Gonzalez-Medina,Zlatan Stanojevic,Adrian Chasin,Gerhard Rzepa

Micromachines（2024）

Cited0Views0WOSBibtex

On the Potential of Ambipolar Schottky-Based Ferroelectric Transistor Designs for Enhanced Memory Windows in Scaled Devices

Mischa Thesberg, Tetiana Obukhova,Damien Deleruyelle,Jens Trommer,Thomas Mikolajick,Oskar Baumgartner,Franz Schanovsky,Zlatan Stanojevic,Markus Karner

IEEE TRANSACTIONS ON ELECTRON DEVICESno. 11 (2024): 6686-6690

Cited0Views0EIWOSBibtex

TCAD for Circuits and Systems: Process Emulation, Parasitics Extraction, Self-Heating

Zlatan Stanojevic,Xaver Klemenschits,Gerhard Rzepa,Ferdinand Mitterbauer,Christian Schleich,Franz Schanovsky,Oskar Baumgartner,Markus Karner

BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposiumpp.294-297, (2024)

Cited0Views0EIWOSBibtex

An Efficient and Accurate DTCO Simulation Framework for Reliability and Variability-Aware Explorations of FinFETs, Nanosheets, and Beyond

Markus Kamer,Gerhard Rzepa,Christian Schleich,Franz Schanovsky,Christian Kernstock, Hui-Wen Karner,Oskar Baumgartner,Zlatan Stanojevic

8TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE, EDTM 2024pp.741-743, (2024)

Cited2Views0EIWOSBibtex

Hierarchical Transport Modeling for Path-Finding DTCO

L.-C. Hung,G. Rzepa, M. Kampl, C.-M. Tsai,F. Schanovsky,O. Baumgartner,Z. Stanojević,M. Karner

2024 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)pp.1-4, (2024)

Cited0Views0EIWOSBibtex

An Experimentally Validated TCAD Variability Study of the Relative Performance of In-Ga-Zn-O and Poly-Si-Channel Ferroelectric VNANDs

M. Thesberg, Z. Stanojević,F. Schanovsky, J.M. Gonzalez-Medina,G. Rzepa,F. Mitterbauer,O. Baumgartner, M. Karner

2024 IEEE International Electron Devices Meeting (IEDM)pp.1-4, (2024)

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A Study of the Variability and Design Considerations of Ferroelectric VNAND Memories with Polycrystalline Films Using an Experimentally Validated TCAD Model

M. Thesberg,F. Schanovsky,Z. Stanojevic,O. Baumgartner,M. Karner

European Solid-State Device Research Conferencepp.77-80, (2023)

Cited1Views0EIWOSBibtex

Compact Metal-Ferroelectric-Insulator-Semiconductor (MFIS) Approaches Versus TCAD for the Modeling of Ferroelectric Transistors (fefets): Percolation, Steep-Subthreshold and Depolarization

M. Thesberg,F. Schanovsky,Z. Stanojevic,O. Baumgartner,M. Karner

2023 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, SISPADpp.117-120, (2023)

Cited1Views0EIWOSBibtex

Quasi-Fermi-Based Charge Transport Scheme for Device Simulation in Cryogenic, Wide-Band-Gap, and High-Voltage Applications

Zlatan Stanojevic,Jose Maria Gonzalez-Medina,Franz Schanovsky,Markus Karner

IEEE TRANSACTIONS ON ELECTRON DEVICES（2023）

Cited4Views0EIWOSBibtex

Modeling the Operation of Charge Trap Flash Memory–Part I: the Importance of Carrier Energy Relaxation

F. Schanovsky,D. Verreck,Z. Stanojevic, S. Schallert,A. Arreghini,G. van den Bosch,M. Rosmeulen,M. Karner

IEEE Transactions on Electron Devicesno. 1 (2023): 547-553

Cited2Views0EIWOSBibtex

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