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Dr. Brown's primary area of research is THz technology and science, including new THz photoconductive materials and devices for 1550-nm pump lasers, ultra-efficient 1550-nm photoconductive switches, quantum-optical (superradiant) emitters, and new passive components based on surface-structured plasmonics. He discovered the superradiant emitters in dense arrays of ErAs quantum dots embedded in GaAs, which display a wealth of interesting materials science and electron transport effects as well, including an insulator-to-metal phase transition.
His second area of research is quantum transport devices, especially n-type resonant-tunneling diodes (RTDs) which have been an area of expertise since his postdoctoral research in the 1980s. The initial focus was on demonstrating RTDs as room-temperature THz oscillators, which led to a demonstration up to 712 GHz in 1990 – a record high frequency which has only been been eclipsed in the past 10 years. More recently his focus has shifted to the development of RTDs in alternative material systems, such as GaN/AlN, for which his team demonstrated the first room-temperature, reproducible operation in 2016. Besides fast oscillation and switching, they also discovered strong band-edge electroluminescence from both GaN/AlN and In0.53Ga0.47As/AlAs RTDs, and have associated the emission with hole generation created by interband tunneling. Hence, they have proven that RTDs can exhibit two types of tunneling simultaneously – resonant-intraband and non-resonant interband tunneling, which together produce a useful room-temperature light emission
Dr. Brown's primary area of research is THz technology and science, including new THz photoconductive materials and devices for 1550-nm pump lasers, ultra-efficient 1550-nm photoconductive switches, quantum-optical (superradiant) emitters, and new passive components based on surface-structured plasmonics. He discovered the superradiant emitters in dense arrays of ErAs quantum dots embedded in GaAs, which display a wealth of interesting materials science and electron transport effects as well, including an insulator-to-metal phase transition.
His second area of research is quantum transport devices, especially n-type resonant-tunneling diodes (RTDs) which have been an area of expertise since his postdoctoral research in the 1980s. The initial focus was on demonstrating RTDs as room-temperature THz oscillators, which led to a demonstration up to 712 GHz in 1990 – a record high frequency which has only been been eclipsed in the past 10 years. More recently his focus has shifted to the development of RTDs in alternative material systems, such as GaN/AlN, for which his team demonstrated the first room-temperature, reproducible operation in 2016. Besides fast oscillation and switching, they also discovered strong band-edge electroluminescence from both GaN/AlN and In0.53Ga0.47As/AlAs RTDs, and have associated the emission with hole generation created by interband tunneling. Hence, they have proven that RTDs can exhibit two types of tunneling simultaneously – resonant-intraband and non-resonant interband tunneling, which together produce a useful room-temperature light emission
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IEEE Journal of Selected Topics in Quantum Electronicsno. 5: Terahertz Photonics (2023): 1-1
NAECON 2023 - IEEE National Aerospace and Electronics Conferencepp.141-143, (2023)
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PHYSICAL REVIEW RESEARCHno. 4 (2022): 043040
2022 IEEE Research and Applications of Photonics in Defense Conference (RAPID)pp.1-2, (2022)
2021 CONFERENCE ON LASERS AND ELECTRO-OPTICS EUROPE & EUROPEAN QUANTUM ELECTRONICS CONFERENCE (CLEO/EUROPE-EQEC)pp.1-1, (2021)
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