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排名必读论文期刊顶会热点AI 简史溯源树小脉星探人才迁徙塔尖人才国防情报追踪开源工具智慧手语
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论文共 101 篇作者统计合作学者相似作者

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2-kbits 40-nm Hybrid Anti-fuse and D-fuse OTP-PUF MACRO by Enhancedsecurity-processed scheme with 100-ns of Program-time & Robust-retention in 200°C
Po Hsiung Huang, Y.H. Lin, K.H. Chang, T.H. Shen, R.Y. Lyu, K.Y. Lee, M.L. Miu,E Ray Hsieh
Extended Abstracts of the 2023 International Conference on Solid State Devices and Materials (2023)
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A Nonvolatile Ternary-Content-Addressable- Memory Comprising Resistive-Gate Field-Effect Transistors
E. Ray Hsieh, Yu Lian Hsueh, Rui Qi Lin,Yi Xiang Huang, Pei Jun Hou, Kai Hsiang Chang, Ting Ho Shen, Yu Hsien Li,Ruei Yang Lyu
IEEE Electron Device Lettersno. 8 (2023): 1292-1295
引用2浏览0EIWOS引用
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3-bits-per-cell 2T32CFE nvTCAM by Angstrom-laminated Ferroelectric Layers with 10¹¹ Cycles of Endurance and 4.92V of Ultra-wide Memory-windows for In-memory-searching
E. R. Hsieh,Y. T. Tang,C. R. Liu, S. M. Wang, Y. L. Hsueh, R. Q. Lin,Y. X. Huang,Y. T. Chen
2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)pp.1-2, (2023)
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1-Transistor 1-Source/Channel/Drain-Diode (1T1D) One-Time-Programmable Memory in 14-nm FinFET
E. Ray Hsieh, Yu Ming Luo,Yi Xiang Huang, Huan Shiang Su, Rui Qi Lin,Yu-Hsien Lin, Kai Hsiang Chang, Ting Ho Shen, Chuan Hsi Liu
IEEE Electron Device Lettersno. 3 (2023): 404-407
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A 40-nm Loadless 4T-SRAM TRNG MACRO with Read-just-after-write (RAW) Scheme Featuring 5.3Gb/s and 3.64TOP/W
Y. S. Wu, K. H. Chang, P. S. Huang, M. L. Miu, S. Y. Huang,S. M. Lu, H. S. Su,E. Ray Hsieh
2023 SILICON NANOELECTRONICS WORKSHOP, SNWpp.111-112, (2023)
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NVDimm-FE: A High-density 3D Architecture of 3-bit/c 2TnCFE to Break Great Memory Wall with 10 ns of PGM-pulse, 1010 Cycles of Endurance, and Decade Lifetime at 103 °C
E. R. Hsieh, J. K. Chang,T. Y. Tang,Y. J. Li, C. W. Liang,M. Y. Lin,S. Y. Huang,C. J. Su, J. C. Guo, S. S. Chung
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)pp.359-360, (2022)
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NVDimm-FE: A High-density 3D Architecture of 3-bit/c 2TnCFE to Break Great Memory Wall with 10 ns of PGM-pulse, 10 10 Cycles of Endurance, and Decade Lifetime at 103 °C
E. R. Hsieh, J. K. Chang,T. Y. Tang,Y. J. Li, C. W. Liang, M. Y. Lin,S. Y. Huang,C. J. Su, J. C. Guo, Steve S. Chung
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)pp.359-360, (2022)
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