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He has worked on developing Toggle and then Spin-Transfer-Torque MRAM, including discovering perpendicular magnetic anisotropy in CoFeB|MgO and using these materials to make the first practical perpendicularly magnetized tunnel junctions. Daniel led the IBM team to demonstrate the first integrated perpendicular Spin-Transfer-Torque MRAM, with ultra-low write-error-rate. His current research interests include magnetic devices and their behavior at small dimensions, and new hardware approaches to machine learning. Dr. Worledge has received four IBM Outstanding Technical Achievement Awards, three IBM Outstanding Innovation Awards, the IBM Research Client Award, and is a Fellow of APS and IEEE.
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MRS ADVANCESno. 5 (2023): 131-137
2023 IEEE International Reliability Physics Symposium (IRPS)pp.1-4, (2023)
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Christopher Safranski,Guohan Hu,Jonathan Z. Sun,Pouya Hashemi,Stephen L. Brown,Luxherta Buzi, Christopher P. D'Emic,Eric R. J. Edwards, Eileen Galligan,Matthias G. Gottwald,Oki Gunawan,Saba Karimeddiny,
IEEE TRANSACTIONS ON ELECTRON DEVICESno. 12 (2022): 7180-7183
2022 IEEE International Memory Workshop (IMW)pp.1-4, (2022)
user-61447a76e55422cecdaf7d19(2022)
C Safranski,Guohan Hu,J Z Sun,P Hashemi,S L Brown,L Buzi, C P D'emic, E R J Edwards, Eileen A Galligan,M G Gottwald,O Gunawan,S Karimeddiny,
G. Hu, G. Lauer,J. Z. Sun,P. Hashemi,C. Safranski,S. L. Brown,L. Buzi, E. R. J. Edwards, C. P. D'Emic, E. Galligan,M. G. Gottwald,O. Gunawan,
2021 IEEE International Electron Devices Meeting (IEDM)pp.2.5.1-2.5.4, (2021)
H. Wu, V. Katragadda, E. Evarts, E. Edwards,R. Southwick,A. Dutta, G. Lauer, V. Mehta, R. Johnson,O. van der Straten, A. Reznicek, M. Wordeman,
2021 IEEE International Electron Devices Meeting (IEDM)pp.2.3.1-2.3.4, (2021)
D. Edelstein,M. Rizzolo, D. Sil, A. Dutta, J. DeBrosse, M. Wordeman,A. Arceo, I. C. Chu,J. Demarest, E. R. J. Edwards, E. R. Evarts, J. Fullam,
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