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个人简介
Dan is the author of more than 600 publications on radiation effects in microelectronics, low-frequency noise, and defects in microelectronic devices and materials, 13 of which have been recognized with Outstanding Paper Awards. These papers have been cited more than 28,000 times (citation h factor = 91, Google Scholar). In 2009, he received the IEEE Nuclear and Plasma Sciences Society’s Merit Award, which is the society’s highest individual technical honor. He serves as Senior Editor, Radiation Effects, IEEE Transactions on Nuclear Science, Vice-Chair, Publications, IEEE NPSS Radiation Effects Committee, and Distinguished Lecturers Chair, IEEE NPSS. In 1997 Dan received R&D 100 and Industry Week Magazine awards for co-invention of a new type of computer memory chip based on mobile protons in SiO2. This chip was also recognized as Discover Magazine’s 1998 Invention of the Year in computer hardware and electronics. Dan is a Life Fellow of the Institute for Electrical and Electronics Engineers and a Fellow of The American Physical Society, the American Association for the Advancement of Science, and the National Academy of Inventors. He is a member of ASEE, Phi Beta Kappa, and Sigma Pi Sigma.
研究兴趣
论文共 699 篇作者统计合作学者相似作者
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IEEE Transactions on Nuclear Scienceno. 4 (2024): 372-374
IEEE Transactions on Nuclear Scienceno. 4 (2024): 368-369
IEEE TRANSACTIONS ON ELECTRON DEVICESno. 2 (2024): 1024-1030
IEEE Transactions on Nuclear Scienceno. 4 (2024): 370-371
IEEE Transactions on Nuclear Scienceno. 4 (2024): 367-367
IEEE Transactions on Electron Devicesno. 6 (2023): 3215-3222
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Dan Fleetwood,Heather Quinn, William Robinson,Steven Moss,Vincent Goiffon,Philippe Paillet, Lili Ding,Daniel Loveless,Jeffrey Black,Federico Faccio,Janet Barth
IEEE TRANSACTIONS ON NUCLEAR SCIENCEno. 8 (2023): 1529-1529
2023 Device Research Conference (DRC)pp.1-2, (2023)
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R. M. Cadena,D. R. Ball,E. X. Zhang,S. Islam, A. Senarath,M. W. McCurdy,E. Farzana, J. S. Speck, N. Karom,A. O'Hara,B. R. Tuttle,S. T. Pantelides,
IEEE Transactions on Nuclear Scienceno. 4 (2023): 363-369
2023 Device Research Conference (DRC)pp.1-2, (2023)
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