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Daniel Oberli was born in Switzerland in 1957. After completing his undergraduate education in the Physics department at EPFL he was awarded a Fulbright Fellowship to enter the graduate program in physics from the University of Illinois at Urbana-Champaign. He received his degree of Doctor of Philosophy in Physics in 1988. His thesis topic was the intersubband dynamics of photo excited carriers in two-dimensional semiconductor structures, for which he developed an original experimental approach based on time-resolved Raman scattering of electronic excitations. From 1988 to 1989, he was a post-doctoral fellow at AT&T Bell laboratories, where he pursued his research interests on the ultra fast time-resolved optical properties of semiconductor microstructures under the leadership of Dr. J. Shah. In 1990, he joined the Walter Schottky Institute of the Technical University of Munich, where he evidenced and studied Fano resonances in the optical excitation spectra of semiconductor quantum wells. Since 1994, he has been in the Institute of Physics of the School of Basic Sciences at EPFL. His main research activities include the electronic and optical properties of low-dimensional semiconductor structures, in particular quantum wires, quantum wells and dots, Raman scattering by phonons and electronic excitations in nanostructures and the radiative properties of exciton-polaritons in semiconductor microcavities, including the dynamics of exciton-polaritons and their interactions. He is a member of the American Physical Society.
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SCIENTIFIC REPORTSno. 1 (2019): 19396-6
N. Takemura, M. D. Anderson,S. Biswas, M. Navadeh-Toupchi,D. Y. Oberli, M. T. Portella-Oberli,B. Deveaud
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