D. V. Ishchenko - Rzhanov Institute of Semiconductor Physics, Russian Academy of Sciences

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个人简介

Denis V. Ishchenko, postgraduate study was finished in 2013. His researched area is narrow-gap semiconductor, low-temperature properties of PbSnTe, doped with indium, MBE technology.

研究兴趣

论文共 49 篇作者统计合作学者相似作者

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Resonance Raman Scattering of Topological Insulators Bi2Te3 and Bi2-xSbxTe3-ySey Thin Films

N. Kumar,N. V. Surovtsev,D. V. Ishchenko,P. A. Yunin,I. A. Milekhin,O. E. Tereshchenko,A. G. Milekhin

JOURNAL OF RAMAN SPECTROSCOPY (2024)

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Nelineynyy Koeffitsient Kholla V Plenkakh Trekhmernogo Topologicheskogo Izolyatora

N. P Stepina,A. O Bazhenov,A. V Shumilin,E. Yu Zhdanov,D. V Ishchenko,V. V Kirienko,M. S Aksenov,O. E Tereshchenko

Pisʹma v žurnal êksperimentalʹnoj i teoretičeskoj fizikino. 3-4 (2024): 208-213

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Electronic Band Structure Vs Intrinsic Antisite Doping in the MBE Grown Films MnTe Bi(2-x)Te3(1-x/2) (0 ≥ X < 2): Evidence from Spectroscopic Ellipsometry and Infrared Studies

N. N. Kovaleva,D. Chvostova,A. V. Muratov, T. N. Fursova, S. I. Bozhko,Yu. A. Aleshchenko, A. Dejneka,K. I. Kugel,D. V. Ishchenko, O. E. Tereshchenko

APPLIED PHYSICS LETTERSno. 26 (2024)

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Formation of Well-Ordered Surfaces of Bi2-xSbxTe3-ySey Topological Insulators Using Wet Chemical Treatment

A. S. Tarasov,N. Kumar,V. A. Golyashov,I. O. Akhundov,D. V. Ishchenko,K. A. Kokh,A. O. Bazhenov,N. P. Stepina,O. E. Tereshchenko

APPLIED SURFACE SCIENCE (2024)

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Effect of Indium on the Surface Morphology of PbSnTe Films

Ekaterina D. Kyrova,Denis V. Ishchenko, Sergey P. Suprun, Ekaterina L. Molodtsova,Oleg E. Tereshchenko

2024 IEEE 25th International Conference of Young Professionals in Electron Devices and Materials (EDM)pp.140-143, (2024)

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Polarization-resolved Resonant Raman Excitation of Surface and Bulk Electronic Bands and Phonons in MBE-grown Topological Insulator Thin Films

N. Kumar,D. V. Ishchenko,I. A. Milekhin,P. A. Yunin, E. D. Kyrova, A. V. Korsakov,O. E. Tereshchenko

PHYSICAL CHEMISTRY CHEMICAL PHYSICS（2024）

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Raman Scattering Spectroscopy of MBE Grown Thin Film Topological Insulator Bi2-xSbxTe3-ySey

N. Kumar,N. V. Surovtsev,P. A. Yunin,D. V. Ishchenko,I. A. Milekhin,S. P. Lebedev,A. A. Lebedev,O. E. Tereshchenko

PHYSICAL CHEMISTRY CHEMICAL PHYSICSno. 17 (2024): 13497-13505

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Nonlinear Hall Coefficient in Films of a Three-Dimensional Topological Insulator

N. P. Stepina,A. O. Bazhenov,A. V. Shumilin,E. Yu. Zhdanov,D. V. Ishchenko,V. V. Kirienko,M. S. Aksenov,O. E. Tereshchenko

JETP Lettersno. 3 (2024): 199-204

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Структурные И Транспортные Свойства Пленок Трехмерного Топологического Изолятора На Основе Халькогенидов Висмута И Сурьмы

Н.П. Степина,А.О. Баженов,В.В. Кириенко,Д.В. Ищенко,И.О. Ахундов,А.С. Тарасов,В.А. Голяшов, Е.С. Жданов,О.Е. Терещенко, Е.С. Климова,К.А. Кох, А.С. Шумилин, А.Ю. Кунцевич

Сборник тезисов докладов Четвертой российской конференции «Графен молекула и 2D-кристалл» (2023)

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Indication of Novel Magnetoresistance Mechanism in (bi,sb)_2(te,se)_3 3D Topological Insulator Thin Films

N. P. Stepina,A. O. Bazhenov,A. V. Shumilin,A. Yu. Kuntsevich,V. V. Kirienko, E. S. Zhdanov,D. V. Ishchenko,O. E. Tereshchenko

arxiv（2023）

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