C. L. Reynolds

C. Lewis Reynolds, Jr., (M'83) received the B.S. degree in physics from the Virginia Military Institute, Lexington, VA, in 1970 and the M.S. and Ph. D. degrees in materials science from the University of Virginia, Charlottesville, in 1972 and 1974, respectively. He was a Research Associate in physics at the University of Illinois, Urbana, from 1974 to 1977, investigating the low-temperature properties of quantum and amorphous solids. From 1977 to 1980, he was a Senior Project Engineer with Union Carbide Corporation, Indianapolis, IN, working on the deposition of thick-film coatings. Since 1980, he has been a Member of Technical Staff of Bell Laboratories, formerly with AT&T and Lucent Technologies, and most recently with Agere Systems, Breinigsville, PA. During this time, his efforts have been directed toward the growth, characterization, and packaging of AlGaAs and InGaAsP lasers and the growth of heterostructures by molecular beam epitaxy for GaAs integrated circuits. He is currently a member of the Semiconductor Photonics Research Department, working on MOVPE of strained-quantum-well and distributed-feedback InGaAsP lasers, waveguides, and selected area growth. Since 1988, he has also been a Distinguished Member of Technical Staff. He has authored or co-authored more than 100 publications and holds four U.S. patents.