Chul LeeAdv Technol Dev Team 1 Samsung Elect Co关注立即认领分享关注立即认领分享基本信息浏览量:5职业迁徙个人简介暂无内容研究兴趣论文共 18 篇作者统计合作学者相似作者按年份排序按引用量排序主题筛选期刊级别筛选合作者筛选合作机构筛选时间引用量主题期刊级别合作者合作机构Recessed transistor and method of manufacturing the sameKeunnam Kim,Makoto Yoshida,Chul Lee,Donggun Park, Wounsuck Yangmag(2015)引用23浏览0引用230Trench-type capacitor, semiconductor device having the same, and semiconductor module having the semiconductor deviceChul Lee,Hyeongsun Hong,Deoksung Hwang, Jaeman Yoon,Bongsoo Kimmag(2013)引用23浏览0引用230VERTICAL TYPE INTEGRATED CIRCUIT DEVICES, MEMORY DEVICES, AND METHODS OF FABRICATING THE SAME Jaeman Yoon,Hyeongsun Hong, Kwangyoul Chun,Makoto Yoshida,Deoksung Hwang,Chul Leemag(2011)引用24浏览0引用240Semiconductor device including active pattern with channel recess, and method of fabricating the sameKyoungho Jung,Makoto Yoshida,Jaerok Kahng,Chul Lee,Keunnam Kimmag(2010)引用25浏览0引用250A Novel Multifin Dynamic Random Access Memory Periphery Transistor Technology Using a Spacer Patterning through Gate Polycrystalline Silicon TechniqueMakoto Yoshida,Keunnam Kim,Jaerok Kahng,Chul Lee,Hyunju Sung,Kyoung-Ho Jung,Joon-Seok Moon,Wouns Yang,Kyung-Seok OhJAPANESE JOURNAL OF APPLIED PHYSICS(2009)引用1浏览0引用10Three Series-Connected Transistor Model for a Recess-Channel-Array Transistor and Improvement of Electrical Characteristics by a Bottom Fin StructureMakoto Yoshida,Jae-Rok Kahng,Joon-Seok Moon,Kyoung-Ho Jung,Keunnam Kim,Hyunju Sung,Chul Lee,Chang-Kyu Kim,Wouns Yang,Gyoyoung Jin,Kyung-Seok OhJAPANESE JOURNAL OF APPLIED PHYSICS(2009)引用0浏览0引用00Semiconductor devices including transistors having three dimensional channels and methods of fabricating the same Eunsuk Cho,Chul Leemag(2008)引用28浏览0引用280Semiconductor Devices Including Transistors Having Three Dimensional Channels Eunsuk Cho,Chul Leemag(2008)引用28浏览0引用280Investigation of Body Bias Dependence of Gate-Induced Drain Leakage Current for Body-Tied Fin Field Effect TransistorMakoto Yoshida,Chul Lee,Kyoung-Ho Jung,Chang-Kyu Kim,Hui-Jung Kim, Heungsik Park,Won-Sok Lee,Keunnam Kim,Jae-Rok Kahng,Wouns Yang,Donggun ParkJAPANESE JOURNAL OF APPLIED PHYSICS(2008)引用0浏览0引用00Recessed Channel Fin Field-Effect Transistor Cell Technology for Future-Generation Dynamic Random Access MemoriesMakoto Yoshida,Jae-Rok Kahng,Joon-Seok Moon,Kyoung-Ho Jung,Keunnam Kim,Hyunju Sung,Chul Lee,Chang-Kyu Kim,Wouns Yang,Donggun ParkJAPANESE JOURNAL OF APPLIED PHYSICS(2008)引用4浏览0引用40加载更多作者统计合作学者合作机构D-Core合作者学生导师暂无相似学者,你可以通过学者研究领域进行搜索筛选数据免责声明页面数据均来自互联网公开来源、合作出版商和通过AI技术自动分析结果,我们不对页面数据的有效性、准确性、正确性、可靠性、完整性和及时性做出任何承诺和保证。若有疑问,可以通过电子邮件方式联系我们:report@aminer.cn