Chi-Chung Kei - National Applied Research Laboratories, Taiwan Instrument Research Institute

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Highly Scaled BEOL-Compatible Thin Film Transistors With Ultrathin Atomic Layer Deposited Indium–Tin–Zinc–Oxide Channel

Yan-Kui Liang, Jun-Yang Zheng, Yu-Lon Lin, Yu-Cheng Lu,Dong-Ru Hsieh, Tsung-Te Chou,Chi-Chung Kei,Huai-Ying Huang,Yu-Ming Lin,Yuan-Chieh Tseng, Tien-Sheng Chao,Edward Yi Chang,

IEEE Transactions on Electron Devices（2024）

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A low-temperature photoresist-based film-profile engineering scheme for fabricating bottom- and double-gated indium-gallium-zinc oxide TFTs

Ping-Che Liu, Po-Jung Lin,Yu-Chi Chen,Chien-Wei Chen,Chi-Chung Kei,Pei-Wen Li,Horng-Chih Lin

JAPANESE JOURNAL OF APPLIED PHYSICSno. 3 (2024)

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Suppressing Threshold Voltage Drift in Sub-2 nm In₂O₃ Transistors With Improved Thermal Stability

Kris K. H. Lin, Li-Cheng Teng, Tzu-Ting Weng, Tzu-Jie Lin, Jian-Cun Lin,Shin-Yuan Wang,Po-Hsun Ho,Wei-Yen Woon,Chi-Chung Kei, Tsung-Te Chou,Chao-Hsin Chien,Der-Hsien Lien

IEEE Electron Device Lettersno. 1 (2024): 60-63

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High-performance monolayer MoS₂ nanosheet GAA transistor

Bo-Jhih Chou,Yun-Yan Chung,Wei-Sheng Yun,Chen-Feng Hsu,Ming-Yang Li,Sheng-Kai Su,San-Lin Liew,Vincent Duen-Huei Hou,Chien-Wei Chen,Chi-Chung Kei, Yun-Yang Shen,Wen-Hao Chang,

NANOTECHNOLOGYno. 12 (2024)

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First Demonstration of Highly Scaled Atomic Layer Deposited Ultrathin InSnZnO Channel Thin Film Transistor Exhibiting Superior Electrical Characteristics

Yan-Kui Liang, Jun-Yang Zheng, Yu-Lon Lin,Yu Chen,Kuan-Lun Chen,Dong-Ru Hsieh,Li-Chi Peng,Ching-Hua Chiu, Yu-Chcng Lu, Tsung-Te Chou,Chi-Chung Kei,Chun-Chieh Lu,

2023 International Electron Devices Meeting (IEDM)pp.1-4, (2023)

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Effects of In/Zn composition on the Performance of Ultra-thin Atomic Layer Deposited InxZnl-xO Channel Thin-Film Transistors

Yan-Kui Liang, June-Yang Zheng,Jing-Wei Lin, Yi Miao Hua, Tsung-Te Chou,Chun-Chieh Lu,Huai-Ying Huang,Yu-Ming Lin,Chi-Chung Kei, Edward-Yi Chang,Chun-Hsiung Lin

2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)pp.1-3, (2023)

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Monolayer-MoS2 Stacked Nanosheet Channel with C-type Metal Contact

Yun-Yan Chung,Wei-Sheng Yun, Bo-Jhih Chou,Chen-Feng Hsu, Shao-Ming Yu, G. Arutchelvan,Ming-Yang Li, Tsung-En Lee, Bo-Jiun Lin, Chen-Yi Li, Aslan Wei,D. Mahaveer Sathaiya,

2023 International Electron Devices Meeting (IEDM)pp.1-4, (2023)

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Highly Stable Short Channel Ultrathin Atomic Layer Deposited Indium Zinc Oxide Thin Film Transistors With Excellent Electrical Characteristics

Yan-Kui Liang,Wei-Li Li, Jun-Yang Zheng, Yu-Lon Lin,Yu-Cheng Lu,Ching-Hua Chiu,Dong-Ru Hsieh, Tsung-Te Chou,Chi-Chung Kei,Huai-Ying Huang,Yu-Ming Lin,Yuan-Chieh Tseng,

IEEE Electron Device Lettersno. 10 (2023): 1644-1647

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Low N-Type Contact Resistance to Carbon Nanotubes in Highly Scaled Contacts through Dielectric Doping

Nathaniel Safion, Hsin-Yuan Chiu, Tzu-Ang Chao,Sheng-Kai Su,Matthias Passlack, Kuang-Hsiang Chiu,Chien-Wei Chen,Chi-Chung Kei,Chen-Han Chou, Tsung-En Lee,Jer-Fu Wang, Chih-Sheng Chang,

2023 International Electron Devices Meeting (IEDM)pp.1-4, (2023)

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Wafer-scale MOCVD grown WS₂ with normally off transistor behavior and its general application on different amorphous substrates

Wen-Chia Wu, Kuan-Ning Huang, Chien-Ying Su,Chi-Chung Kei, Cheng Huang Kuo,Chao-Hsin Chien

APPLIED PHYSICS LETTERSno. 18 (2023)

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