基本信息
浏览量:110
职业迁徙
个人简介
Major areas of research
1. DRAM capacitor dielectric films and process integration
- (Ba,Sr)TiO3, SrTiO3, TiO2, BixTiySizO, Al2O3/HfO2 bi-layer dielectrics film research by MOCVD and ALD
- Metal electrode (Ru, Pt) MOCVD
- Metal (Ru, Pt)/poly-Si electrodes and barrier integration
- New structure and integration schemes
2. High-k gate dielectric films for MOSFETs
- Al2O3, HfO2, HfxSi1-xO2, TiO2 films by MOCVD and ALD
- Poly-Si/metal electrode integration
- Long channel and short channel MOSFET fabrication
3. Ferroelectric thin films and devices
- Pb(Zr,Ti)O3 thin film growth by MOCVD and ALD
- FeRAM device integration and reliability
4. New memory devices
- Resistive change random access memories
- Phase change random access memories
5. Dielectric phenomenology of high dielectric films and Leakage current mechanism for MIM and MIS capacitors
- C-V, I-V and P-V measurement in wide temperature range and phase transition behavior of thin film ferroelectrics
- modeling the leakage current phenomena and prove the model using numerical analysis
1. DRAM capacitor dielectric films and process integration
- (Ba,Sr)TiO3, SrTiO3, TiO2, BixTiySizO, Al2O3/HfO2 bi-layer dielectrics film research by MOCVD and ALD
- Metal electrode (Ru, Pt) MOCVD
- Metal (Ru, Pt)/poly-Si electrodes and barrier integration
- New structure and integration schemes
2. High-k gate dielectric films for MOSFETs
- Al2O3, HfO2, HfxSi1-xO2, TiO2 films by MOCVD and ALD
- Poly-Si/metal electrode integration
- Long channel and short channel MOSFET fabrication
3. Ferroelectric thin films and devices
- Pb(Zr,Ti)O3 thin film growth by MOCVD and ALD
- FeRAM device integration and reliability
4. New memory devices
- Resistive change random access memories
- Phase change random access memories
5. Dielectric phenomenology of high dielectric films and Leakage current mechanism for MIM and MIS capacitors
- C-V, I-V and P-V measurement in wide temperature range and phase transition behavior of thin film ferroelectrics
- modeling the leakage current phenomena and prove the model using numerical analysis
研究兴趣
论文共 897 篇作者统计合作学者相似作者
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Sung Keun Shim,Yoon Ho Jang,Janguk Han,Jeong Woo Jeon,Dong Hoon Shin, Yeong Rok Kim,Joon-Kyu Han,Kyung Seok Woo, Soo Hyung Lee, Sunwoo Cheong,Jaehyun Kim,Haengha Seo,
SMALLpp.e2306585-e2306585, (2024)
Jeong Woo Jeon,Byongwoo Park,Yoon Ho Jang, Soo Hyung Lee,Sangmin Jeon,Janguk Han,Seung Kyu Ryoo,Kyung Do Kim,Sung Keun Shim, Sunwoo Cheong,Wonho Choi, Gwangsik Jeon,
Nanoscale (2024)
Dong Hoon Shin, Hyungjun Park,Nestor Ghenzi, Yeong Rok Kim, Sunwoo Cheong,Sung Keun Shim, Seongpil Yim,Tae Won Park,Haewon Song,Jung Kyu Lee, Byeong Su Kim,Taegyun Park,
ACS APPLIED MATERIALS & INTERFACES (2024)
Nanoscale horizonsno. 3 (2024): 427-437
NANOSCALE HORIZONSno. 3 (2024)
Dong Hoon Shin, Hyungjun Park, Néstor Ghenzi, Yeong Rok Kim, Sunwoo Cheong,Sung Keun Shim, Seongpil Yim,Tae Won Park,Haewon Song,Jung Kyu Lee, Byeong Su Kim,Taegyun Park,
ACS Applied Materials & Interfaces (2024)
In Kyung Baek, Soo Hyung Lee,Yoon Ho Jang, Hyungjun Park, Jaehyun Kim, Sunwoo Cheong,Sung Keun Shim,Janguk Han,Joon-Kyu Han, Gwangsik Jeon,Dong Hoon Shin,Kyung Seok Woo,
Nanoscale Advances (2024)
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