Christian SandowInfineon Technologies AG关注立即认领分享关注立即认领分享基本信息浏览量:30职业迁徙个人简介暂无内容研究兴趣论文共 21 篇作者统计合作学者相似作者按年份排序按引用量排序主题筛选期刊级别筛选合作者筛选合作机构筛选时间引用量主题期刊级别合作者合作机构Electrical characterization of different DEPFET designs on die level B Bergbauer,S Aschauer,K Hermenau,John T Horstmann,T Lauf,Peter Lechner,P Majewski,Norbert Meidinger,Jonas Reiffers,R Richter,C Sandow,Gerhard Schaller,JOURNAL OF INSTRUMENTATION(2014)引用3浏览0引用30$\Omega$ -Gated Silicon and Strained Silicon Nanowire Array Tunneling FETsS Richter,C Sandow,A Nichau,S Trellenkamp,M P Schmidt, R Luptak,K K Bourdelle,Q T Zhao,S MantlIEEE Electron Device Letters(2012)引用57浏览0EIWOS引用570New Simulation And Measurement Results On Gatebale Depfet DevicesAlexander Bahr,S Aschauer, Katrin Hermenau,S Herrmann,Peter Lechner, G Lutz,P Majewski,Danilo Miessner,Matteo Porro, R Richter,Gerhard Schaller,C Sandow,HIGH ENERGY, OPTICAL, AND INFRARED DETECTORS FOR ASTRONOMY V(2012)引用7浏览0引用70DEPFET active pixel sensor with non-linear amplificationPeter Lechner,L Andricek,S Aschauer,A J Bahr,G De Vita,K Hermenau, T Hildebrand, G Lutz,P Majewski,M Porro,R Richter,C Sandow,Nuclear Science Symposium and Medical Imaging Conference(2011)引用22浏览0EIWOS引用220Strategy for calibrating the non-linear gain of the DSSC detector for the European XFELGeorg Weidenspointner,Robert Andritschke,S Aschauer,Peter Fischer,Sam Granato,K Hansen,Peter Lechner,Gerhard Lutz, D Moch,Matteo Porro,C Sandow,Tushar Sant,Nuclear Science Symposium and Medical Imaging Conference(2011)引用9浏览0EIWOS引用90Modeling, fabrication and characterization of silicon tunnel field effect transistorsC Sandow, S Mantlmag(2011)引用23浏览0引用230Small-signal analysis of high-performance p- and n-type SOI SB-MOSFETs with dopant segregationC. Urban,M. Emam,C. Sandow,Q.T. Zhao,A. Fox,S. Mantl,J.-P. RaskinSolid-State Electronics(2010)引用14浏览0EI引用140Radio-Frequency Study of Dopant-Segregated n-Type SB-MOSFETs on Thin-Body SOIChristoph Urban,Mostafa Emam,Christian Sandow,Joachim Knoch,Qing-Tai Zhao,Jean-Pierre Raskin,Siegfried MantlIEEE Electron Device Letters(2010)引用24浏览0EIWOS引用240Systematic study of Schottky barrier MOSFETs with dopant segregation on thin-body SOIC. Urban,C. Sandow,Q.-T. Zhao,J. Knoch,S. Lenk,S. MantlSolid-State Electronics(2010)引用17浏览0EI引用170Impact of electrostatics and doping concentration on the performance of silicon tunnel field-effect transistorsC. Sandow,J. Knoch,C. Urban,Q.-T. Zhao,S. MantlSolid-State Electronics(2009)引用110浏览0EI引用1100加载更多作者统计合作学者合作机构D-Core合作者学生导师暂无相似学者,你可以通过学者研究领域进行搜索筛选数据免责声明页面数据均来自互联网公开来源、合作出版商和通过AI技术自动分析结果,我们不对页面数据的有效性、准确性、正确性、可靠性、完整性和及时性做出任何承诺和保证。若有疑问,可以通过电子邮件方式联系我们:report@aminer.cn