Andrew Binder

Andrew T. Binder (Member, IEEE) received the B.S. degree from the University of Arkansas, Fayetteville, AR, USA, in 2013, and the Ph.D. degree from the University of Central Florida, Orlando, FL, USA, in 2019. He is currently a Senior Member of Technical Staff, Sandia National Laboratories, Albuquerque, NM, USA. At Sandia, he leads a multidisciplinary team developing vertical gallium nitride (vGaN) junction barrier Schottky (JBS) and MOSFET devices and Silicon Carbide (SiC) Bi-directioanl Field Effect Transistor (BiDFETs). Under his leadership, this team has successfully demonstrated a new process for vGaN trench MOSFETs at Sandia, an accomplishment that was selected to be featured in the 2021 U.S. DRIVE Highlight by the Department of Energy (DOE). In addition to microfabrication, his research background includes a focus on the physics and modeling of breakdown for wide bandgap power devices. His research is focused on the development of vGaN power devices.