基本信息
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Bio
Benoît Hackens was born in Leuven, Belgium, on December 3, 1976. He received the Ph.D. degree from the Université Catholique de Louvain, Louvain-la-Neuve, Belgium, in 2005. His doctoral research concerned ballistic and coherent electron transport properties of low-dimensional systems fabricated from bismuth films and semiconductor heterostructures.
He is currently a European Community (EC) Marie Curie grant holder with the Laboratoire de Spectrométrie Physique (SPECTRO), Université Joseph Fourier, Grenoble, France. He is involved in low-temperature scanning probe measurements on semiconductor nanodevices.
Research Interests
Papers共 191 篇Author StatisticsCo-AuthorSimilar Experts
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Nanoscaleno. 17 (2025): 11060-11070
Jean Spiece,Kunal Lulla, Pauline de Crombrugghe de Picquendaele,Laurent Divay,Odile Bezencenet,Benoit Hackens,Pascal Gehring, Alex J. Robson,Charalambos Evangeli,Oleg V. Kolosov
ACS APPLIED MATERIALS & INTERFACESno. 34 (2024): 45671-45677
Alessandra Canetta,Sergio Gonzalez-Munoz,Viet-Hung Nguyen,Khushboo Agarwal, Pauline de Crombrugghe de Picquendaele,Yuanzhuo Hong,Sambit Mohapatra,Kenji Watanabe,Takashi Taniguchi,Bernard Nysten,Benoit Hackens,Rebeca Ribeiro-Palau,Jean-Christophe Charlier,Oleg Victor Kolosov,Jean Spiece,Pascal Gehring
NANOSCALEno. 18 (2023)
arXiv (Cornell University) (2022)
Pauline de Crombrugghe,Cristiane Nascimento Santos,Yuanzhuo Hong,Sambit Mohapatra,Kenji Watanabe, Takeshi Taniguchi, Jean‐François Lampin,Rebeca Ribeiro-Palau,Bernard Nysten,Benoît Hackens
HAL (Le Centre pour la Communication Scientifique Directe) (2022)
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Author Statistics
#Papers: 191
#Citation: 3511
H-Index: 27
G-Index: 45
Sociability: 6
Diversity: 2
Activity: 16
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