Prof. Benoit Bakeroot (°1975, Ypres Belgium) received the M.Sc. degree in physics in 1997, and the Ph.D. degree in electrical engineering in 2004, both from Ghent University, Belgium. In October 1998, he joined the Centre for Microsystems Technology Group (CMST), a research group in the Electronics and Information Systems (ELIS) department of the Faculty of Engineering and Architecture at the Ghent University. CMST is an associated lab with the Inter-University Microelectronics Centre (imec, Belgium). Benoit Bakeroot worked on integrated power devices in submicron complementary MOS technologies for smart-power applications, finalized in his PhD thesis. Since 2004, he has been a postdoctoral researcher at CMST (imec) mainly working on the development, design, Technology Computer Aided Design (TCAD) simulations, and modelling of GaN power devices. He works in close collaboration with the GaN groups at imec (Leuven) in the frame of imec’s industrial affiliation program (IIAP) on GaN power devices. He is also involved as project manager and/or researcher in European funded projects (HiPERFORM, UltimateGaN, HiEFFICIENT...). He is also in charge of maintaining the TCAD platform for the numerical simulations of GaN power devices within imec's IIAP. Since October 2012, Benoit Bakeroot is also part-time associate professor at the Ghent University and is lecturer-in-charge of a course on semiconductor device physics. He has authored or co-authored over 80 articles in international journals or conference proceedings.