Throughout his career, he has specialized in the development of MOCVD processes for a wide range of compound semiconductor materials and device technologies. His work on AlGaN alloys has spanned more than 20 years and enabled UV laser diodes and LEDs, UV-sensitive photodetectors, intersubband, electro-absorptive modulators at 1550 nm, and more recently Al-rich AlGaN-channel HEMTs and power diodes along with high temperature MOCVD growth processes for h-BN. His prior work includes MOCVD growth of As-P-Sb and dilute nitride III-V compound semiconductors for mid-IR laser diodes and LEDs, near-IR VCSELs, HBTs, HFETs, HEMTs, solar cells (1 eV) and photonic integrated circuits. Andy is a member of several international advisory boards for III-Nitride semiconductor conferences and has been program co-chairs of numerous conferences over the past 27 years.