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Alois Krost received the diploma and doctoral degrees in physics from RWTH Aachen, Germany.
He then joined Technical University Berlin, Berlin, Germany, as a Head of the Materials Department. Since 1998, he has been a Full Professor at Otto-von-Guericke-University, Magdeburg, Germany. In the past 30 years, he has been involved in growth and characterization of semiconductors including ${\hbox {V}}_{2}{\hbox {VI}}_{3}$-, semimagnetic II-VI-, IV-VI-, and conventional III-V compounds for electronic and optoelectronic applications including self-organized InGaAs quantum dot lasers. Currently, his main focus is on metalorganic vapour phase epitaxy growth and characterization of wide bandgap group-III nitrides, and ZnO. Especially, his group has pioneered metal organic vapour phase epitaxy of GaN-on-silicon as a cheap alternative to growth on conventional sapphire and SiC substrates. These activities led to a startup company, AZZURRO Semiconductors, Magdeburg, Germany. His special interest is on advanced X-ray characterization methods. He authored or coauthored around 300 papers and filed 30 patent applications and patents.
Dr. Krost is a member of the German Physical Society, The International Society for Optical Engineers (SPIE), and TMS.
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Erik G Strom,Hannes Hartenstein,Paolo Santi,Werner Wiesbeck, H Morkoc,Alois Krost,Yasushi Nanishi, D J Silversmith, J H Leach,Qian Fan,Naoki Ikeda,Yuki Niiyama,
mag(2010)
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