A. A. Nikolskaya - Research Institute of Physics and Technology, Lobachevsky State University of Nizhny Novgorod

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Effect of Post-Implantation Heat Treatment Conditions on Photoluminescent Properties of Ion-Synthesized Gallium Oxide Nanocrystals

Dmitry S Korolev,Kristina S Matyunina, Alena A Nikolskaya,Alexey I Belov, Alexey N Mikhaylov,Artem A Sushkov, Dmitry A Pavlov,David I Tetelbaum

Nanomaterials (Basel, Switzerland)no. 10 (2024): 870

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Effect of Si+ Ion Implantation in alpha-Ga2O3 Films on Their Gas Sensitivity

Nikita Yakovlev,Aleksei Almaev,Pavel Butenko,David Tetelbaum,Alexey Mikhaylov,Alena Nikolskaya,Aleksei Pechnikov,Sergey Stepanov,Mikhail Boiko,Andrei Chikiryaka,Vladimir Nikolaev

IEEE SENSORS JOURNALno. 3 (2023): 1885-1895

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Effect of Si⁺ Ion Implantation in α-Ga₂O₃ Films on Their Gas Sensitivity

Nikita Yakovlev, А. V. Аlmaev,P. N. Butenko, D. I. Tetelbaum, A. N. Mikhaylov,Alena Nikolskaya, A. I. Pechnikov, S. I. Stepanov, М. В. Бойко, A. V. Chikiryaka,В. И. Николаев

IEEE Sensors Journalno. 3 (2023): 1885-1895

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Effect of Si⁺ Ion Implantation in α-Ga₂O₃ Films on Their Gas Sensitivity

Nikita Yakovlev,Aleksei Almaev,Pavel Butenko,David Tetelbaum,Alexey Mikhaylov,Alena Nikolskaya,Aleksei Pechnikov,Sergey Stepanov,Mikhail Boiko,Àndrei Chikiryaka,Vladimir Nikolaev

IEEE Sensors Journalno. 3 (2023): 1885-1895

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Photoluminescent properties of the SiO2/Si system with ion-synthesized hexagonal silicon of the 9R-Si phase: Effect of post-implantation annealing

A.A. Nikolskaya, D.S. Korolev,V.N. Trushin,P.A. Yunin,A.N. Mikhaylov, A.I. Belov, A.A. Konakov, E.V. Okulich,D.A. Pavlov, D.I. Tetelbaum

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and ...（2023）

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Formation of Hexagonal Phase 9R-Si in SiO$${}_{\mathbf{2}}$$/Si System upon Kr$${}^{\mathbf{+}}$$ Ion Implantation

Alena Nikolskaya, Д. С. Королев, A. N. Mikhaylov,A. A. Konakov, А. И. Охапкин, S. A. Kraev, Alexey Andrianov, A. D. Moiseev,A. A. Sushkov, Д. А. Павлов,D. I. Tetelbaum

Moscow University Physics Bulletinno. 3 (2023): 361-367

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Structure and Chemical Composition of Ion-Synthesized Gallium Oxide Nanocrystals in Dielectric Matrices

Dmitry S Korolev,Ruslan N Kriukov,Kristina S Matyunina,Alena A Nikolskaya,Alexey I Belov,Alexey N Mikhaylov,Artem A Sushkov,Dmitry A Pavlov,David I Tetelbaum

Nanomaterials (Basel, Switzerland)no. 10 (2023)

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Formation of Hexagonal Phase 9R-Si in SiO _2 /Si System upon Kr ^+ Ion Implantation

A. A. Nikolskaya, D. S. Korolev, A. N. Mikhaylov, A. A. Konakov, A. I. Okhapkin, S. A. Kraev, A. I. Andrianov, A. D. Moiseev, A. A. Sushkov, D. A. Pavlov,D. I. Tetelbaum

Moscow University Physics Bulletinno. 3 (2023): 361-367

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Structural disorder and distribution of impurity atoms in β-Ga2O3 under boron ion implantation

A.A. Nikolskaya, D.S. Korolev,V.N. Trushin,M.N. Drozdov, P.A. Yunin, E.A. Pitirimova, A.V. Kudrin, E.V. Okulich, V.I. Okulich,A.N. Mikhaylov, D.I. Tetelbaum

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and ...（2023）

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Luminescence of modified W-centers arising in silicon upon irradiation of the SiO2/Si system by Kr+ ions

Alena Nikolskaya,Dmitry Korolev,Alexey Mikhaylov,Anton Konakov, Andrey Okhapkin, Stanislav Kraev,Artem Sushkov,Dmitri Pavlov,David Tetelbaum

Materials Letters (2023): 134302-134302

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