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Papers共 209 篇Author StatisticsCo-AuthorSimilar Experts

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Effect of Strain in Channel on Electron Transport Properties of Ga1-xInxSb HEMT Structures with Strained-Al0.40In0.60Sb/Al0.25In0.75Sb Stepped Buffer
K. Hatori,N. Kishimoto, M. Hiraoka, Y. Endoh, K. Osawa, T. Hayashi, Y. Kemmochi,R. Machida,I. Watanabe, Y. Yamashita,S. Hara,A. Kasamatsu,A. Endoh,H. I. Fujishiro
2022 Compound Semiconductor Week (CSW)pp.1-2, (2022)
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#Papers: 209

#Citation: 3103

H-Index: 23

G-Index: 45

Sociability: 6

Diversity: 3

Activity: 11

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