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排名必读论文期刊顶会热点AI 简史溯源树小脉星探人才迁徙塔尖人才国防情报追踪开源工具智慧手语
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论文共 20 篇作者统计合作学者相似作者

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Integrated Test Circuit for Off-State Dynamic Drain Stress Evaluation
J. Hai, F. Cacho,X. Federspiel, T. Garba-Seybou,A. Divay, E. Lauga-Larroze, J.-D. Arnould
2023 IEEE International Reliability Physics Symposium (IRPS)pp.1-6, (2023)
引用0浏览0EIWOS引用
0
0
A highly rugged 39 GHz 19.3 dBm Power Amplifier for 5G Applications in 45nm SOI Technology
Alice Bossuet,Baudouin Martineau,Cedric Dehos,Benjamin Blampey,Alexis Divay, Yvan Morandini
2021 16th European Microwave Integrated Circuits Conference (EuMIC)pp.80-83, (2022)
引用1浏览0EIWOS引用
1
0
CMOS FD-SOI Technologies Ruggedness for Millimeter Wave Power Amplifier Design
B. Martineau, A. Bossuet,A. Divay, B. Blampey, Y. Morandini
2022 29th IEEE International Conference on Electronics, Circuits and Systems (ICECS)pp.1-4, (2022)
引用0浏览0EIWOS引用
0
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Highly robust and reliable power amplifiers in 22FDX and 45RFSOI technologies
A. Bossuet,A. Divay,B. Martineau,C. Dehos, B. Blampey, Y. Morandini
ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC)pp.332-335, (2022)
引用0浏览0EIWOS引用
0
0
Comprehensive Analysis of RF Hot-Carrier Reliability Sensitivity and Design Explorations for 28GHz Power Amplifier Applications
J. Hai, F. Cacho,A. Divay, E. Lauga-Larroze,J.-D. Arnould, J. Forest, V. Knopik,X. Garros
2022 IEEE International Reliability Physics Symposium (IRPS)pp.4B.2-1-4B.2-6, (2022)
引用2浏览0EIWOS引用
2
0
65nm RFSOI Power Amplifier Transistor Ageing at mmW frequencies, 14 GHz and 28 GHz
A. Divay, J. Forest, V Knopik, J. Hai, N. Revil, J. Antonijevic, A. Michard, F. Cacho,E. Vincent, F. Gaillard,X. Garros
2021 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)pp.39.3.1-39.3.4, (2021)
引用3浏览0EIWOS引用
3
0
A 3.2–3.6GHz SOI-LDMOS Dual-Input Doherty Power Amplifier
Saad Boutayeb,Ayssar Serhan,Pascal Reynier,Damien Parat,Alexis Divay,Jean-Daniel Arnould,Estelle Lauga-Larroze,Alexandre Giry
2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)pp.1-2, (2019)
引用0浏览0EIWOS引用
0
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A 22nm FDSOI Technology with integrated 3.3V/5V/6.5V RFLDMOS Devices for IOT SOC applications
C. Schippel, S. Lehmann,S.N. Ong, A. Muehlhoff, I. Cortés, W.H. Chow, D. Utess,A. Zaka,A. Divay, A. Pakfar,J. Faul,J. Mazurier,
2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)pp.1-3, (2018)
引用8浏览0EIWOS引用
8
0
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